Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples: Difference between revisions
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==Results== | ==Results== | ||
The results below are made with the approach described above. | The results below are made with the approach described above. The pattern is defined in 180 nm AR-P 6200 on a silicon substrate, exposed at 29 nA. The circle size as a function of dwell time and beam pitch is illustrated in the graph. It is seen that the circle pitch has a significant impact on circle size even for the same dwell time, this is naturally due to the proximity effect and can not be avoided. The graph can however serve as a guide to chose the right combination of beam pitch and dwell time to obtain the array one desires. | ||