Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions
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==Fracturing== | ==Fracturing== | ||
Pattern fracturing is an essential part of the pattern preparation process. Pattern fracturing will automatically happen at either Proximity Effect Correction in Beamer or upon export to V30. If one does not actively change fracturing parameters it will be done with default parameters which can work great in many cases. For best possible result it can however be necessary to actively control how the pattern is fractured, how beam shots are placed to form the pattern and what order pattern elements are written in. This can all be controlled with the ''Fracture'' node in Beamer and hence in combination with the ''PEC'' node it is one of the most impactful nodes. In this section we will illustrate some of the issues that the ''Fracture'' node can help mitigate. For information on the ''Fracture'' node in Beamer, please refer to the Beamer guide. | Pattern fracturing is an essential part of the pattern preparation process. Pattern fracturing will automatically happen at either Proximity Effect Correction in Beamer or upon export to V30. If one does not actively change fracturing parameters it will be done with default parameters which can work great in many cases. For best possible result it can however be necessary to actively control how the pattern is fractured, how beam shots are placed to form the pattern and what order pattern elements are written in. This can all be controlled with the ''Fracture'' node in Beamer and hence in combination with the ''PEC'' node it is one of the most impactful nodes. In this section we will illustrate some of the issues that the ''Fracture'' node can help mitigate. For information on the ''Fracture'' node in Beamer, please refer to the Beamer guide. | ||
For precise control of critical dimension (CD) for small features it is important to consider the actual beam size and how it is placed, i.e. how the shapes are filled with beam shots. This is illustrated in the three shapes below. The left shape is 25 x 25 nm and written with a 5 nm beam spot. This works very well. However, if one wishes to write a 28 x 28 nm shape under the same circumstances shot filling becomes an issue. Similarly in the right hand shape, any shape that has a sloped edge will have shot filling issues. It is obvious that these issues are only a concern with CD control on a sub beam size level is needed. | |||
== Bulk and sleeve separation - double current exposure == | == Bulk and sleeve separation - double current exposure == | ||