Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions
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==Fracturing== | ==Fracturing== | ||
Pattern fracturing is an essential part of the pattern preparation process. Pattern fracturing will automatically happen at either Proximity Effect Correction in Beamer or upon export to V30. If one does not actively change fracturing parameters it will be done with default parameters which can work great in many cases. For best possible result it can however be necessary to actively control how the pattern is fractured, how beam shots are placed to form the pattern and what order pattern elements are written in. This can all be controlled with the ''Fracture'' node in Beamer and hence in combination with the ''PEC'' node it is one of the most impactful nodes. In this section we will illustrate some of the issues that the ''Fracture'' node can help mitigate. For information on the ''Fracture'' node in Beamer, please refer to the Beamer guide. | |||
== Bulk and sleeve separation - double current exposure == | == Bulk and sleeve separation - double current exposure == | ||