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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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[[Category: Equipment|Thin film Sputter deposition Lesker]]
[[Category: Equipment|Thin film Sputter deposition Lesker]]
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The cluster-based multi-chamber high vacuum sputtering deposition system is a robotic cluster tool with two deposition chambers sharing the same distribution trasfer station and the load-lock. The equipment has been installed and accepted in the clean-room during January of 2020. The purpose of the tool is to deposit a variety of materials using DC/RF/PulseDC/HIPIMS magnetron sputtering with or without RF substrate bias.  
The cluster-based multi-chamber high vacuum sputtering deposition system is a robotic cluster tool with two deposition chambers sharing the same distribution trasfer station and the load-lock. The equipment has been installed and accepted in the clean-room during January of 2020. The purpose of the tool is to deposit a variety of materials using DC/RF/PulseDC/HIPIMS magnetron sputtering with or without RF substrate bias.  


In <b>PC 1</b> (process chamber 1) it is possible to deposit any material using 6 x 3” magnetrons sourses with N<sub>2</sub> or O<sub>2</sub> reactive gases.  
In <b>PC 1</b> (process chamber 1) it is possible to deposit any material using 6 x 3” magnetrons sources with N<sub>2</sub> or O<sub>2</sub> reactive gases.  


<b>PC 3</b>  (process chamber 3) is dedicated to oxygen free materials - nitrides and metals. It is equipped with 1 x 4” + 2 x 3” magnetrons and supplied with N<sub>2</sub> process gas for reactive deposition. Both chambers allow heating of substrates up to 600 <sup>o</sup>C. The equipment is located in cleanroom A-5 where the user can acces the cassette loader.  
<b>PC 3</b>  (process chamber 3) is dedicated to oxygen free materials - nitrides and metals. It is equipped with 1 x 4” + 2 x 3” magnetrons and supplied with N<sub>2</sub> process gas for reactive deposition. Both chambers allow heating of substrates up to 600 <sup>o</sup>C. The equipment is located in cleanroom A-5 where the user can acces the cassette loader.  
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|style="background:WhiteSmoke; color:black" align="center"|0.3
|style="background:WhiteSmoke; color:black" align="center"|0.3


|style="background:WhiteSmoke; color:black" align="center"|RF/PDC
|style="background:WhiteSmoke; color:black" align="center"|PDC




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Additional information about the processes and equipment performace can be found here:
Additional information about the processes and equipment performace can be found here:


*Pre-acceptance test [[Media:Cluster-based multi-chamber high vacuum sputtering deposition system pre acceptance.pptx]]
*Pre-acceptance test [[:File:Cluster-based multi-chamber high vacuum sputtering deposition system pre acceptance.pptx]]


*Acceptance test [[Media:Cluster-based multi-chamber high vacuum sputtering deposition system Acceptance.pptx]]
*Acceptance test [[:File:Cluster Lesker P1 and P3 Acceptance test FOR LA PUBLICATION.pdf]]




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So far the following results can be used as a guide or reference:
So far the following results can be used as a guide or reference:
(Look for updated information in a specific [[Specific_Process_Knowledge/Thin_film_deposition|material list]]).