Specific Process Knowledge/Characterization/PL mapper: Difference between revisions
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==PhotoLuminescence Mapper RPM2000 == | ==PhotoLuminescence Mapper RPM2000 == | ||
[[Image:PL-mapper.jpg|500px|right|thumb|Positioned in the MOCVD room: F-1, | [[Image:PL-mapper.jpg|500px|right|thumb|Positioned in the MOCVD room: F-1, {{photo1}}]] | ||
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Photoluminescence mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscence Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs. | Photoluminescence mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscence Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs. | ||