Specific Process Knowledge/Characterization/XPS/NexsaOverview: Difference between revisions
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|docLink=https://assets.thermofisher.com/TFS-Assets/MSD/Application-Notes/AN52344-composition-coverage-band-gap-aanalysis-ald-grown-ultra-thin-films.pdf | |docLink=https://assets.thermofisher.com/TFS-Assets/MSD/Application-Notes/AN52344-composition-coverage-band-gap-aanalysis-ald-grown-ultra-thin-films.pdf | ||
|XPSused= |UPSused= |ISSused= |REELSused= |Ramanused= | |XPSused= |UPSused= |ISSused= |REELSused= |Ramanused= | ||
|AdditionalOption= | |AdditionalOption=Band gap | ||
|Sample= | |Sample=Gate dielectrics, HfO<sub>2</sub>, SiO<sub>2</sub> | ||
|Abstract= | |Abstract= | ||
}} | }} | ||
{{Template:Nexsa-addpubrow | {{Template:Nexsa-addpubrow | ||
|LMdocID= | |LMdocID=5389 | ||
|LMdocTitle= | |LMdocTitle=Confirming the layer structure of an organic FET device | ||
|LMdocType= | |LMdocType=Application note | ||
|LMdocAuthor= | |LMdocAuthor=P Mack | ||
|docLink= | |docLink=https://www.thermofisher.com/document-connect/document-connect.html?url=https://assets.thermofisher.com/TFS-Assets%2FMSD%2FApplication-Notes%2FAN52476-confirming-layer-structure-organic-fet-device.pdf | ||
|XPSused= |UPSused= |ISSused= |REELSused= |Ramanused= | |XPSused= |UPSused= |ISSused= |REELSused= |Ramanused= | ||
|AdditionalOption= | |AdditionalOption=MAGCIS | ||
|Sample= | |Sample=Organic FET's | ||
|Abstract= | |Abstract= | ||
}} | }} | ||
| [[media:AN52476-confirming-layer-structure-organic-fet-device.pdf | | | [[media:AN52476-confirming-layer-structure-organic-fet-device.pdf | ]]|||| ||||X||||||||||||,|| | ||
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{{Template:Nexsa-addpubrow | {{Template:Nexsa-addpubrow | ||