Specific Process Knowledge/Characterization/XPS/NexsaOverview: Difference between revisions
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|Abstract= | |Abstract=X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy are two popular analytical techniques due to their flexibility, ease of use, and the wealth of information they provide. Until recently analysis of a material with both of these techniques required the use of two different instruments, however the development of coincident XPSRaman allows for straightforward and quick utilisation of both techniques opening up new exciting materials characterisation opportunities. | ||
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|LMdocTitle=Composition, coverage and band gap analysis of ALD-grown ultra thin films | |||
|LMdocType=Application note | |||
|LMdocAuthor=P Mack | |||
|docLink=https://assets.thermofisher.com/TFS-Assets/MSD/Application-Notes/AN52344-composition-coverage-band-gap-aanalysis-ald-grown-ultra-thin-films.pdf | |||
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| [[media:AN52344-composition-coverage-band-gap-aanalysis-ald-grown-ultra-thin-films.pdf | | | [[media:AN52344-composition-coverage-band-gap-aanalysis-ald-grown-ultra-thin-films.pdf | ]]||||||||X||||X||X||||Band gap||Gate dielectrics, HfO2, SiO2|| | ||
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| [[media:AN52476-confirming-layer-structure-organic-fet-device.pdf | Confirming the layer structure of an organic FET device]]||Application note||P Mack ||||X||||||||||MAGCIS||Organic FET's,|| | | [[media:AN52476-confirming-layer-structure-organic-fet-device.pdf | Confirming the layer structure of an organic FET device]]||Application note||P Mack ||||X||||||||||MAGCIS||Organic FET's,|| | ||
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