Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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[[Category: Furnaces|A2]] | [[Category: Furnaces|A2]] | ||
==Gate Oxide furnace (A2)== | ==Gate Oxide furnace (A2)== | ||
[[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1]] | [[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | ||