Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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 *Thermal oxidation of Si wafers
 *Driving-in pre-deposited or ion-implanted phosphorus
-|style="background:WhiteSmoke; color:black"|Oxidation:
+|style="background:WhiteSmoke; color:black"|
 Thermal oxidation:
 *Dry oxidation using O<sub>2</sub>
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 *Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
-*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
+*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 *N<sub>2</sub>
 *O<sub>2</sub>
-*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into water vapour for wet oxidation)
+*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O for wet oxidation)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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 *Silicon wafers (RCA cleaned)
-*Wafers from the the Phosphorus Pre-dep furnace (A4 )can go directly into the furnace
+*Wafers coming form the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace
 |-
 |}