Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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 !style="background:silver; color:black;" align="center"|Purpose
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-*Drive-in of phosphorous
+*Thermal oxidation of Si wafers
-*Oxidation of silicon
+*Driving-in pre-deposited or ion-implanted phosphorus
-*Oxidation of phosphorous phase layers
 |style="background:WhiteSmoke; color:black"|Oxidation:
-*Dry
+Thermal oxidation:
-*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
+*Dry oxidation using O<sub>2</sub>
+*Wet oxidation using H<sub>2</sub>O vapour
+Driving-in pre-deposited or ion-implanted phosphorus
+*Dry or wet oxidation recipes are normally used for this purpose
 |-
 !style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide layer)
+*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
-*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (it takes too long to grow a thicker oxide layer)
+*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*800-1150 <sup>o</sup>C
+*800 <sup>o</sup>C - 1150 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (no vacuum)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>
+*N<sub>2</sub>
+*O<sub>2</sub>
+*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into water vapour for wet oxidation)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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 *Silicon wafers (RCA cleaned)
-*Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace
+*Wafers from the the Phosphorus Pre-dep furnace (A4 )can go directly into the furnace
 |-
 |}