Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

@@ Line 38: / Line 38: @@
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
-|style="background:LightGrey; color:black"| Thinning
+|style="background:LightGrey; color:black"| 20x20mm substrate
 |style="background:WhiteSmoke; color:black"|
-*Removal rate: 1-10µm/min
+*Removal rate: 400nm/min
-*Thickness accuracy: +/- 10 µm
+*Thickness accuracy: +/- ? µm
-*Thickness homogeneity: +/- 10 µm
+*Thickness homogeneity: +/- ? µm
 *Roughness: +/- ? µm
 <!-- |style="background:WhiteSmoke; color:black"|
@@ Line 49: / Line 49: @@
 *Performance range 3 -->
 |-
-|style="background:LightGrey; color:black"|Polishing
+|style="background:LightGrey; color:black"|100mm substrate
 |style="background:WhiteSmoke; color:black"|
-*Removal rate: ~1 µm/min
+*Removal rate: ~ 60 nm/min
 *Thickness accuracy: ? µm
 *Thickness homogeneity: ? µm