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Specific Process Knowledge/Characterization/XPS/XPS Depth profiling: Difference between revisions

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* Nitrogen, also fully oxidized (oxidation state IV)
* Nitrogen, also fully oxidized (oxidation state IV)
and plot their atomic percentages along with the percentages of oxygen and nitrogen.
and plot their atomic percentages along with the percentages of oxygen and nitrogen.
== asdf ==
{| border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
|  width="40" align="center" style="background:#f0f0f0;"|
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_.28Sensofar.29|Optical profiler]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XRD|XRD]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/DSC_Perkin_Elmer|Differen- tial Scan- ning Calori- meter DSC]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]'''
|  width="40" align="center" style="background:#f0f0f0;"|'''IR-camera'''
|  width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Breakdown voltage
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|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Carrier density/doping profile
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|-style="background:#DCDCDC;" align="center"
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||x||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Dimensions(in plane)||x||x||(x)||(x)||x||||||||||||||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||||x||||||||||||||||||||
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|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||||x||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes||||||||||||||||||||||||||||||||||x||||||
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|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||||||||||||||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
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|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||||x||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
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