Specific Process Knowledge/Characterization/Sample preparation: Difference between revisions

@@ Line 76: / Line 76: @@
 '''General Description'''<br>
-:Process date: Feb 2014<br>
+As exemplified in [[http://www.sciencedirect.com/science/article/pii/S0167931714005322 3]] the three-dimensional shape of deep reactive ion etched cavities have been characterized by replica molding and atomic force microscopy (please cite!). Neither AFM directly, nor the optical profiler was able to do the job due to reasons explained above. The procedure proofed to be extremely reliable and accurate.
-:Recipe: m_res_ny@0degrees<br>
-:Process time: 5:30 min<br>
-:Substrate: 525 µm Si + 1.1 µm thermal silicon oxide + HMDS (adhesion promoter) <br>
-:Mask: [XOP3] AZ positive resist 1.5 µm thick (6-inch aligner 3 sec exposure, 60 sec developer)<br>
-:Etch Load (Total Exposed SiO2): ~ 10 %<br>
-:Post process: O2 Plasma Ashing 10 min
 {| border="1" cellspacing="1" cellpadding="1" align="middle"
 ![[image:SEM_SliceCrossection_1.jpg|300x300px|thumb|left|