Specific Process Knowledge/Etch

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Wet etch or dry etch

Etching at Danchip can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.

Advantages of wet chemistry over dry etch techniques are:

• An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
• Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
• Easy to start up new etch solutions.

Advantages of dry etch over wet chemistry:

• Anisotropic etch can be done.
• The etch does not attack the backside of the sample.

Dry etch Tool Package Training

• Dry etch TPT info

Choose material to be etched

Dry etching of III-V materials and exotic materials in some other European Cleanroom facility

Dielectrica	Semicondutors	Metals	Alloys	Polymers
Silicon Nitride Silicon Oxide Titanium Oxide Aluminum Oxide Bulk Glass - Borofloat (pyrex) and fused silica (quartz)	Silicon InP GaAs InGaAs AlGaAs	Aluminium Chromium Titanium Gold Platinum Magnetic stack - containing Ta/MnIr/NiFe	No results, use IBE	Polymer SU-8 TOPAS

Choose Method/Equipment for the Etch

A Dry Etch Equipment	A Wet Etch
Dry Etch page: General processing and hardware comparison/manuals ASE (Advanced Silicon Etch) AOE (Advanced Oxide Etch) DRIE-Pegasus 1 and 2 (Silicon Etch) ICP Metal Etch III-V ICP III-V RIE - Plassys IBE/IBSD Ionfab 300	Wet Silicon Nitride Etch Wet Silicon Oxide Etch (BHF) KOH Etch - Anisotropic silicon etch Wet Polysilicon Etch - Isotropic silicon etch Wet Aluminium Etch Wet Chromium Etch Wet Titanium Etch Wet Gold Etch Wet Platinum Etch Wet III-V Etches