Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2
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This page is written by Evgeniy Shkondin @DTU Nanolab if nothing else is stated.
All images and photos on this page belongs to DTU Nanolab.
The fabrication and characterization described below were conducted in 2023 by Patama Pholprasit and Evgeniy Shkondin, DTU Nanolab.
Evaporation of Si in Temescal-2
This page describes evaporation method of Si in 10-pocket e-beam evaporator.
Silicon is easily evaporated using e-beam evaporation but nearly impossible with resistive thermal evaporation due to its properties. It is a material that alloys with the refractory boat and easily cracks it, making e-beam evaporation the only viable option. In our case, we place silicon directly into the copper hearth, as using a liner is very challenging since silicon can easily crack it. However, running it directly from the hearth is completely feasible.
Since the evaporation does not involve heating the user can simply use HULA attachment, that ensures an excellent uniformity.
Rise-Soak procedure for Si evaporation. (1Å/s)
Uniformity across 150 mm wafer
Results have been obtained for <100> 150 mm Si wafers with 300 nm thermal SiO2, based on ellipsometry study.
| Temperature (°C) / Thickness setpoint | Deposition rate (nm/s) | Tooling Factor | Average thickness (nm) | Minimum thickness (nm) | Maximum thickness (nm) | Standard deviation | Uniformity (%) |
|---|---|---|---|---|---|---|---|
| Room Temperature / 50 nm | 1 | 80 | 49.63 | 49.32 | 50.00 | 0.20603 | 0.68983 |
Measured and fitted Psi and Delta functions of Si thin film deposited on 300 nm thermal SiO2/Si wafer using the e-beam evaporation method.
Thickness uniformity of Si deposited on 300 nm thermal SiO2/Si wafer using e-beam evaporation. Thickness setpoint sat to 50 nm. Tooling factor - 80%.
Optical functions
Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study.
Refractive index of 50 nm Si deposited on 300 nm thermal SiO2/silicon at room temperature.
Absorption coefficient of of 50 nm Si deposited on 300 nm thermal SiO2/silicon at room temperature.
Deposition recordings
Si evaporation monitoring. Deposition rate recording, thickness setpoint 50 nm.
Si evaporation monitoring. Power recording. Room Temperature, thickness setpoint 50 nm.
Si evaporation monitoring. Pressure recording. Room Temperature, thickness setpoint 50 nm.
Si evaporation monitoring. Temperature recording. Room Temperature, thickness setpoint 50 nm.
