Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!--Process time--> 2:30 | |<!--Process time--> 2:30 | ||
|<!--'''Date'''--> 29/02 <br>-2024 | |<!--'''Date'''--> 29/02 <br>-2024 | ||
|<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png| | |<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|170px]] [[File:Si3N4-pat1-chf3t1-170.png|200px]] [[File:Si3N4-pat1-chf3t1-1000.png|170px]] [[File:Si3N4-pat1-chf3t1-2000.png|170px]] | ||
|<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png| | |<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|170px]] [[File:SiN chf3.t1 sidewalls 02.png|170px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | |<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | ||
|<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> <br> 500nm- 56,36 <br> <br> 1000nm- 64,56 <br> <br> 2000nm- 68,84 | |<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> <br> 500nm- 56,36 <br> <br> 1000nm- 64,56 <br> <br> 2000nm- 68,84 |
Revision as of 11:57, 20 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests
Recipe | Time (min) | Date | SEM picture | Redeposition - top view | Etch rate SiN (nm/min) | Etch rate resist (nm/min) | Selectivity (SiN:resist) |
---|---|---|---|---|---|---|---|
CHF3_t1 CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
2:30 | 29/02 -2024 |
File:Si3N4-pat1-chf3t1-170.png | 250nm- 155,08 500nm- 170,32 1000nm- 174,45 2000nm- 179,76 |
250nm- 65,52 500nm- 56,36 1000nm- 64,56 2000nm- 68,84 |
250nm- 2,37 500nm- 3,02 1000nm- 2,70 2000nm- 2,61 | |
CHF3_t2 CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 29/02 -2024 |
250nm- 28,12 500nm- 41,86 1000nm- 66 2000nm- 63,62 |
250nm- 23,26 500nm- 22,60 1000nm- 16,74 2000nm- 15,34 |
250nm- 1.21 500nm- 1.85 1000nm- 3.94 2000nm- 4.15 | ||
CF4lowCP CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 29/02 -2024 |
250nm- 76,50 500nm- 73,92 1000nm- 73,94 2000nm- 76,50 |
250nm- 44,98 500nm- 33,52 1000nm- 31,16 2000nm- 25,66 |
250nm- 1,70 500nm- 2,21 1000nm- 2,37 2000nm- 2,98 |