Specific Process Knowledge/Characterization: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
 
(20 intermediate revisions by 2 users not shown)
Line 20: Line 20:
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''IR-camera'''
|  width="50" align="center" style="background:#f0f0f0;"|'''IR-camera'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
|  width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]'''
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Breakdown voltage
|align="left"| Breakdown voltage
||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Carrier density/doping profile  
|align="left"| Carrier density/doping profile  
||||||||||||||||||||||||||||||||||||||x
|||||||||||||||||||||||||||||||||||||x||


|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x   7)||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||x
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||x
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||||
|-
|-
|-style="background:#DCDCDC;" align="center"
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
|-
|-
|-style="background:#C0C0C0;" align="center"
|-style="background:#C0C0C0;" align="center"
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||||
|-  
|-  
|}
|}
Line 113: Line 114:
# Only single layer
# Only single layer
# Good for characterization of VCSEL structures and DBR mirrors
# Good for characterization of VCSEL structures and DBR mirrors
# Only for crystalline films


== Choose characterization topic ==
== Choose characterization topic ==
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Element analysis|Element analysis]]
*[[/Element analysis|Element analysis]]
*[[/Measurement of film thickness and optical constants|Measurement of film thickness and optical constants]]
*[[/Measurement of film thickness and optical constants|Film thickness and optical constants]]
*[[/Hardness measurement|Hardness measurement]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/PL mapper|Photoluminescence mapping]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[/Sample imaging|Sample imaging]]
*[[/Sample imaging|Sample imaging]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[/Sample preparation|Sample preparation for inspection]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[/Stress measurement|Stress measurement]]
*[[/Stress measurement|Stress measurement]]
*[[/Hardness measurement|Hardness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Thickness Measurer|Wafer thickness measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[/Topographic measurement|Topographic measurement]]
*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]]
*[[/Four-Point_Probe|Four-Point Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] -->
*[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|Carrier density (doping) profiler]]
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]]
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]  
*[[Specific Process Knowledge/Characterization/XRD|X-ray diffraction]]  
<!--
<!--
Line 138: Line 139:
===AFM===
===AFM===
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']]
*[[/AFM: Atomic Force Microscopy|AFM - ''Atomic Force Microscopy'']]
===Electrical measurements===
*[[/4-Point Probe|4-Point Probe]]
*[[/Probe station|Probe station]]
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]


===Element analysis===
===Element analysis===
Line 152: Line 158:
===Optical microscopes===
===Optical microscopes===
*[[/Optical microscope|Optical microscopes]]
*[[/Optical microscope|Optical microscopes]]
===Optical characterization===
===Optical characterization===
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
*[[/Optical characterization#Ellipsometer|Ellipsometer]]
Line 177: Line 184:
*[[LabAdviser/CEN/Tecnai TEM |Tecnai TEM]]
*[[LabAdviser/CEN/Tecnai TEM |Tecnai TEM]]


===Electrical measurements===
===XRD===
*[[/4-Point Probe|4-Point Probe]]
*[[/XRD|General page on XRD]], page describing general info relevant to both our XRD's
*[[/Probe station|Probe station]]
*[[/XRD/XRD Powder|XRD Powder]], tabletop XRD for Bregg-Brentano measurements of powders
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]]
*[[/XRD/XRD SmartLab|XRD SmartLab]], advanced multipurpose instrument in the cleanroom


===Various===
===Various===
Line 187: Line 194:
*[[/Hardness measurement|Hardness tester]]
*[[/Hardness measurement|Hardness tester]]
*[[/Particle Scanner Takano|Particle Scanner Takano]]
*[[/Particle Scanner Takano|Particle Scanner Takano]]
*[[/XRD/XRD SmartLab|XRD SmartLab]]
*[[/XRD/XRD Powder|XRD Powder]]


==Decommissioned equipment==
==Decommissioned equipment==
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]]
*[[/X-Ray Diffractometer|Phillips X-Ray Diffractometer that was owned by DTU Fotonik]]

Latest revision as of 13:37, 22 January 2024

Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal

Overview of characteristics and where to measure it

Optical Micro- scopes SEM (incl. EDX) AFM Stylus profiler Optical profiler Filmtek (reflec- tometer) Ellip- someter Thickness stylus XPS PL mapper 4-point probe Probe station XRD Life time scanner Drop shape analyser Hardness tester Particle scanner IR-camera III-V ECV-profiler Microspectrophotometer (Craic 20/30 PV)
Breakdown voltage
Carrier density/doping profile x
Charge carrier life time x
Contact angle hydrophobic/hydrophillic x
Crystallinity x
Deposition uniformity x x x
Dimensions(in plane) x x (x) (x) x x
Dimensions(height)/Topography (x) (x) x x x
Electrical conductivity x
Element analysis x x x 4) x 4)
Film stress x x 7)
Imaging x x x x x
Material Hardness x
Band gap x x x
Particles x x x x x
Phase changes
Reflectivity x x x 6) x
Refractive index x x
Resistivity x
Step coverage x 1) x 1)
Surface roughness x x x x
Thermal conductivity
Thin film thickness x 1) x 1) x 2) x 2) x x x x 5) x 3) x
Voids in wafer bonding x x x
Wafer thickness x 1) x 1) x
Work function x
  1. Using the cross section method
  2. Using the create step method
  3. With known resistivity
  4. Composition information for crystalline materials
  5. Only single layer
  6. Good for characterization of VCSEL structures and DBR mirrors
  7. Only for crystalline films

Choose characterization topic

Choose equipment

AFM

Electrical measurements

Element analysis

Optical and stylus profilers

Optical microscopes

Optical characterization

SEMs at DTU Nanolab - building 307/314

SEM's in building 346

TEMs at DTU Nanolab - building 307/314

XRD

  • General page on XRD, page describing general info relevant to both our XRD's
  • XRD Powder, tabletop XRD for Bregg-Brentano measurements of powders
  • XRD SmartLab, advanced multipurpose instrument in the cleanroom

Various

Decommissioned equipment

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization&oldid=48877"