Specific Process Knowledge/Back-end processing/Hot Embosser: Difference between revisions

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|style="background:LightGrey; color:black"|Press Plates Pressure
|style="background:LightGrey; color:black"|Press Plates Pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Max pressure allowed 250 bar
*Max pressure allowed 300 kN
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*0-285 degrees Celsius


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|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*1.5-300 kN
   
   
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Revision as of 12:32, 26 February 2020

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Name of equipment

Write a short description of the equipment(s).

File:Cluster1.jpg
Image(s) of the equipment(s)


The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Hot Embosser in LabManager

Process information

Link to process pages - e.g. one page for each material

Example:

Equipment performance and process related parameters

Equipment Equipment 1
Purpose
  • Hot Embossing
  • Chip Bonding
Performance Press Plates Temperature
  • Upper Plate max temperature 285 degrees Celsius
  • Lower Plate max temperature 285 degrees Celsius
Press Plates Pressure
  • Max pressure allowed 300 kN
Process parameter range Temperature
  • 0-285 degrees Celsius
Pressure
  • 1.5-300 kN
Substrates Batch size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2


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