Specific Process Knowledge/Thin film deposition/Deposition of Chromium

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Studies of Cr deposition processes

Roughness of Chromium - Roughness and Uniformity of Cr layers deposited with different methods and settings

Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates

Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results

Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature

Chromium deposition

Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets))	Thermal evaporation (Thermal evaporator)	Sputter deposition (Lesker sputterer)	Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) )
General description	E-beam deposition of Chromium	Thermal deposition of Chromium	Sputter deposition of Chromium	Sputter deposition of Chromium
Pre-clean	Ar ion gun (only in E-beam evaporator Temescal)			RF Ar clean
Layer thickness	10Å to 300 nm*	100 nm	at least up to 200 nm	at least up to 200 nm
Deposition rate	1 Å/s to 10 Å/s	1 Å/s	Depends on process parameters. At least up to 1.48 Å/s. See process log.	Depends on process parameters.
Batch size	4x6" wafers or 3x8" wafers (ask for holder) Many smaller pieces	Up to *3x 4" wafers or 1x6" or 1x 8" wafer Many smaller samples	1x6" wafers Smaller pieces/wafers	up to 10x4" wafers or up to 10x6" wafers or many smaller samples
Allowed materials	Almost any that does not degas. See the cross-contamination sheet.	Almost any that does not degas. See the cross-contamination sheet.	Silicon wafers and almost any	Almost that does not degas - see cross contamination sheets for PC1 and PC3 Special carrier for III-V materials.
Comment	Takes approx. 20 min to pump down	Takes approx. 20 min to pump down		Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber

* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,