Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Standard recipes on the ALD tool

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Al2O3 (Aluminium oxide)

Al2O3 deposition using TMA and H2O precursors

Recipe name: AL2O3


Temperature window: 150 oC - 350 oC


TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s


Al2O3 deposition using ALD

Al2O3 deposition using TMA and O3 precursors

Recipe name: AL2O3O3


Temperature window: 300 oC - 350 oC


TMA O3
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.1 s
Purge time 3.0 s 4.0 s


Al2O3 deposition on high aspect ratio structures using TMA and H2O precursors

Recipe name: AL2O3T


Temperature window: 150 oC - 350 oC


TMA TMA H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s



TiO2 (Titanium dioxide)

TiO2 deposition using TiCl4 and H2O precursors

Recipe name: TIO2


Temperature window: 120 oC - 150 oC (amorphous TiO2), 300 oC - 350 oC (anatase TiO2)


TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 4.0 s 5.0 s


TiO2 deposition using ALD

TiO2 deposition on high aspect ratio structures using TiCl4 H2O precursors

Recipe name: TIO2T


Temperature window: 120 oC -150 oC (amorphous TiO2), 300 oC - 350 oC (anatase TiO2)


TiCl4 TiCl4 H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s


HfO2 (Hafnium oxide)

HfO2 deposition using TEMAHf and H2O precursors

Recipe names: HFO2-150, HFO2-200, HFO2-250, HFO-300, HFO-350


Temperature window: 150 oC - 350 oC


Recipe for deposition of HfO2 at 150 oC
Main recipe at 150 oC
TEMAHf H2O
N2 flow (sccm) 200 100
Pulse time (s) 1.6 0.1
Purge time (s) 15 10
Boost parameters. TEMAHf (master), H2O (slave)
Boost flow (sccm) 700
Pre empty (s) 0.5
Master fill (s) 1.2
Post empty (s) 0
Lines N2 flow (sccm)
Line 1 100
Line 2 200
Line 3 100
Line 4 40
Recipe for deposition of HfO2 at 200 oC
Main recipe at 200 oC
TEMAHf H2O
N2 flow (sccm) 200 120
Pulse time (s) 1.6 0.1
Purge time (s) 10 10
Boost parameters. TEMAHf (master), H2O (slave)
Boost flow (sccm) 700
Pre empty (s) 0.5
Master fill (s) 1.2
Post empty (s) 0
Lines N2 flow (sccm)
Line 1 120
Line 2 200
Line 3 120
Line 4 40
Recipe for deposition of HfO2 at 250 oC - 350 oC
Main recipe at 250 oC - 350 oC
TEMAHf H2O
N2 flow (sccm) 200 150
Pulse time (s) 1.6 0.1
Purge time (s) 10 10
Boost parameters. TEMAHf (master), H2O (slave)
Boost flow (sccm) 700
Pre empty (s) 0.5
Master fill (s) 1.2
Post empty (s) 0
Lines N2 flow (sccm)
Line 1 150
Line 2 200
Line 3 150
Line 4 80


The TEMAHf precursor is heated to 125 oC (TE210) and the heater (TE211 max.) is set to 150 oC during deposition. Remember to set the values in the "MANUAL" tab and to change them to back after deposition (TE211 max. to 1 oC). These values may not be exceeded to prevent precursor decomposition. Due to the heating of the precursor, the stabilization time needs to be set to at least 60 min. Else an alarm (TE210 PID limit exceeded while pulsing) will be triggered and the process will be stopped after the first pulsing attempt.

Further information can be found here:

HfO2 deposition using TEMAHf and H2O precursors

ZnO (Zinc oxide)

ZnO standard deposition using DEZ and H2O precursors

Recipe name: ZnO

Maximum deposition thickness: 100 nm

Temperature: 100 oC - 250 oC

DEZ* H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 5.0 s 5.0 s

This is a standard recipe of ZnO. It is suitable for coating the flat samples and structures with an aspect ratio of around up to 1:10.

ZnO deposition on high aspect ratio structures using DEZ and H2O precursors

Recipe name: ZnOT

Maximum deposition thickness: 100 nm

Temperature: 100 oC - 250 oC

DEZ* DEZ H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s


This is a more complicated recipe that allows coating the sample with very high aspect ratio profiles. One SEM example is shown on one of the images below. The recipe is good for deposition on very high aspect ratio structures (with aspect ratio more than 1:20) such as deep trenches, pillars, pores etc. ZnOT recipe can also be used for deposition on polymers at low temperatures (80-120 oC).


DEZ is diethylzinc Zn(CH2CH3)2 or ZnEt2


ZnO deposition using ALD

Al-doped ZnO (AZO)

Al-doped ZnO deposition using DEZ, TMA and H2O precursors

Recipe: AZO 20T


(Number 20 means doping level "D": 19 cycles of ZnO + 1 cycle Al2O3, see details in the table below)


Temperature window: 150 oC - 250 oC


# macrocycles N
# cycles 19 1
Precursor DEZ DEZ H2O H2O TMA TMA H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s

How to fill out the process log in LabManager:

The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.

DEZ pulse time: (0.1 + 0.1) s * 19 = 3.8 s

TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s

H2O pulse time: [(0.1 + 0.1) s * 19] + [(0.1 + 0.1) s * 1] = 4.0 s

The number of cycles for each precursor now equals the number of macrocycles (n).


Recipe: AZO 25T


Number 25 means doping level "D": 14 cycles of ZnO + 1 cycle Al2O3, see details in the table below)


Temperature: 150 oC - 250 oC


# macrocycles N
# cycles 24 1
Precursor DEZ DEZ H2O H2O TMA TMA H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s

How to fill out the process log in LabManager:

The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.

DEZ pulse time: (0.1 + 0.1) s * 24 = 4.8 s

TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s

H2O pulse time: [(0.1 + 0.1) s * 24] + [(0.1 + 0.1) s * 1] = 5.0 s

The number of cycles for each precursor now equals the number of macrocycles (n).


Recipe: AZO 30T


(Number 30 means doping level "D": 29 cycles of ZnO + 1 cycle Al2O3, see details in the table below)


Temperature: 150 oC - 250 oC


# macrocycles N
# cycles 29 1
Precursor DEZ DEZ H2O H2O TMA TMA H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s

How to fill out the process log in LabManager:

The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.

DEZ pulse time: (0.1 + 0.1) s * 29 = 5.8 s

TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s

H2O pulse time: [(0.1 + 0.1) s * 29] + [(0.1 + 0.1) s * 1] = 6.0 s

The number of cycles for each precursor now equals the number of macrocycles (n).


Recipe: AZO 35T


(Number 35 means doping level "D": 34 cycles of ZnO + 1 cycle Al2O3, see details in the table below)


Temperature: 150 oC - 250 oC


# macrocycles N
# cycles 34 1
Precursor DEZ DEZ H2O H2O TMA TMA H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s 0.5 s 20.0 s


How to fill out the process log in LabManager:

The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.

DEZ pulse time: (0.1 + 0.1) s * 34 = 6.8 s

TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s

H2O pulse time: [(0.1 + 0.1) s * 34] + [(0.1 + 0.1) s * 1] = 7.0 s

The number of cycles for each precursor now equals the number of macrocycles (n).


Al-doped ZnO deposition using ALD

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