Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/Standard recipes on the ALD2 tool
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A number of standard recipes are available on the ALD2 as seen below. If your want to make a new process, then then please contact the Thin Film group (thinfilm@nanolab.dtu.dk).
Al2O3 (Aluminium oxide)
Al2O3 deposition using TMA and H2O precursors
Recipe name: AL2O3
Temperature window: 150 oC - 350 oC
| TMA | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.1 s |
| Purge time | 3.0 s | 4.0 s |
It is possible to deposit Al2O3 at lower temperatures than 150 oC, but som unreacted TMA (or carbon traces) will then be incorporated in the film.
More information about deposition of Al2O3 can be found here: Al2O3 deposition using ALD1
Al2O3 deposition using TMA and O3 precursors
Recipe name: AL2O3 O3
Temperature window: 150 oC - 350 oC
| TMA | O3 | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.2 s | 0.1 s |
| Purge time | 3.0 s | 4.0 s |
March 2020: This recipe it not available at the moment, because the gases to the ozone generator are not connected.
Al2O3 deposition on high aspect ratio structures using TMA and H2O precursors
Recipe name: AL2O3T
Temperature window: 150 oC - 350 oC
| TMA | TMA | H2O | H2O | |
|---|---|---|---|---|
| Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
| Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
More information about deposition of Al2O3 can be found here: Al2O3 deposition using ALD1
TiO2 (Titanium dioxide)
TiO2 deposition using TiCl4 and H2O precursors
Recipe name: TIO2
Temperature window: 120 oC - 150 oC (amorphous TiO2), 300 oC - 350 oC (anatase TiO2)
| TiCl4 | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.1 s |
| Purge time | 4.0 s | 5.0 s |
More information about deposition of TiCl4 can be found here: TiO2 deposition using ALD1
TiO2 deposition on high aspect ratio structures using TiCl4 and H2O precursors
Recipe name: TiO2T
Temperature window: 120 oC -150 oC (amorphous TiO2), 300 oC - 350 oC (anatase TiO2)
| TiCl4 | TiCl4 | H2O | H2O | |
|---|---|---|---|---|
| Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
HfO2 (Hafnium dioxide)
HfO2 deposition using TEMAHf and H2O precursors
Recipe name: HfO2
Temperature window: 200 °C - 300 °C
| TMA | H2O | |
|---|---|---|
| Nitrogen flow | 200 sccm | 150 sccm |
| Pulse time | 1.5 s | 0.1 s |
| Purge time | 6.0 s | 6.0 s |
HfO2 deposition on high aspect ratio structures using TEMAHf and H2O precursors
Recipe name: HfO2 Trench
Temperature window: 200 °C - 300 °C
| TEMAHf | H2O | |
|---|---|---|
| Nitrogen flow | 200 sccm | 200 sccm |
| Pulse time | 1.5 s | 10 s |
| Purge time | 20.0 s | 20.0 s |
HfO2 deposition using TEMAHf and O2 plasma precursors
Recipe name: HfO2 O2 plasma
Temperature window: 100 °C - 350 °C
Note! Picoflow Diffusion Enhancer is used.
| TEMAHf | O2 | |
|---|---|---|
| Nitrogen flow | 200 sccm | 150 sccm |
| Pulse time | 0.5 s | 30 s |
| Purge time | 10.0 s | 20.0 s |
| Plasma source settings | ||||
|---|---|---|---|---|
| RF power (W) | Ar carrier flow (sccm) | Plasma gas flow (sccm) | t1 stabilization (s) | t2 RF Power on (s) |
| 3000 | 150 | 500 | 1.4 | 28 |
More information about HfO2 plasma process can be found here:
HfO2 deposition using O2 plasma
SiO2 (Silicon dioxide)
SiO2 deposition using SAM24 and O2 plasma
This is an obsolete process that we no longer support!
Recipe name: SiO2 plasma
Temperature window: 100 °C - 300 °C
| SAM24 | O2 plasma | |
|---|---|---|
| Nitrogen flow | 100 sccm | 200 sccm |
| Pulse time | 1.6 s | 20.0 s |
| Purge time | 20.0 s | 10.0 s |
SiO2 deposition on high aspect ratio structures using SAM24 and O2 plasma
This is an obsolete process that we no longer support!
Recipe name: SiO2 plasma trench
Temperature window: 100 °C - 300 °C
| SAM24 | O2 plasma | |
|---|---|---|
| Nitrogen flow | 100 sccm | 200 sccm |
| Pulse time | 1.6 s | 20.0 s |
| Purge time | 20.0 s | 10.0 s |
AlN (Alumium nitride)
AlN deposition using TMA and NH3 plasma
Recipe name: AlN NH3 plasma
Temperature window: 250 °C - 350 °C
The deposition rate is measure to be 0.137 nm/cycle for 350 °C with growth delay of 144 cycles.
| TMA | NH3 | |
|---|---|---|
| Nitrogen flow | 100 sccm | 150 sccm |
| Pulse time | 0.1 s | 5 s |
| Purge time | 8 s | 30 s |
| Plasma source settings | ||||
|---|---|---|---|---|
| RF power (W) | Ar carrier flow (sccm) | Plasma gas flow (sccm) | t1 stabilization (s) | t2 RF Power on (s) |
| 3000 | 150 | 100 | 1 | 3.4 |
More information about AlN plasma process can be found here:
AlN deposition using NH3 plasma
AlN deposition using TMA and N2 plasma
Recipe name: AlN plasma
Temperature window: T < 350 °C
| TMA | N2 plasma | |
|---|---|---|
| Nitrogen flow | 150 sccm | 100 sccm |
| Pulse time | 0.1 s | 16.0 s |
| Purge time | 4.0 s | 4.0 s |
AlN deposition on high aspect ratio structures using TMA and N2 plasma
Recipe name: AlN plasma trench
Temperature window: T < 350 °C
| TMA | N2 plasma | |
|---|---|---|
| Nitrogen flow | 150 sccm | 100 sccm |
| Pulse time | 0.1 s | 26.0 s |
| Purge time | 4.0 s | 15.0 s |
TiN (Titanium nitride)
TiN deposition using TiCl4 and NH3
Recipe name: TiN
Temperature window: 375 °C - 450 °C
| TiCl4 | NH3 | |
|---|---|---|
| Nitrogen flow | 100 sccm | 100 sccm |
| Pulse time | 0.1 s | 2.0 s |
| Purge time | 2.0 s | 6.0 s |
TiN deposition on high aspect ratio structures using TiCl4 and NH3
Recipe name: TiN without lid TRENCH
Temperature window: 375 °C - 450 °C
| TiCl4 | NH3 | |
|---|---|---|
| Nitrogen flow | 100 sccm | 100 sccm |
| Pulse time | 0.5 s | 5.0 s |
| Purge time | 2.0 s | 6.0 s |