Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano34

The Sinano3.4 recipe

Recipe Sinano3.4

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 90 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	431 ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	The 180 nm zep resist etched down to 72 nm

• The results of the Sinano3.4 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 90 W PP, 20 degs, 120 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		78	114	125	129	133	116	22
Sidewall angle	degs		83,07278187	82,82949277	81,35457747	80,01059257	80,6398092	82	1
CD loss	nm/edge		-13	-11	-12	-12	-5	-11	3
CD loss foot	nm/edge		-13	-2	3	6	15	2	10
Bowing			9	8	6	6	-1	5	4
Bottom curvature			-22	-10	-6	-4	-6	-9	7
Zep etch rate								67