Etching using the dry etch technique RIE (Reactive Ion Etch)
RIE1 (part of cluster1)RIE2 (part of cluster2)
At Danchip we have three RIE's. Two (RIE1 and RIE2) for etching silicon based materials (silicon, silicon oxide, sillicon nitride) and one (III-V RIE) for etching III-V materials (is discussed under III-V processing). The hardware of RIE1 and RIE2 is very similar but you cannot count on that identical recipes on RIE1 and RIE2 perform exactly the same. In addition to that the main difference between RIE1 and RIE2 is the cleanness of the two equipment. In rough terms RIE1 is the clean system and the RIE2 is the dirty system. This means that in RIE2 opposed to RIE1 it is allowed have small amounts of metals exposed to the plasma. Look in the manuals for RIE1 and RIE2 to read the details for this difference (you can find the manuals in LabManager [1]).
A rough overview of the performance of PECVD thin films and some process related parameters
Purpose
Deposition of dielectrica
Silicon oxide
Silicon nitride
Silicon oxynitride
PBSG (Phosphorous Boron doped Silica Glass)
Silicon oxide doped with Germanium
Performance
Film thickness
~10nm - 30µm
.
Index of refraction
~1.4-2.1
.
Step coverage
In general: Not so good
PBSG: Floats at 1000oC
.
Film quality
Not so dense film
Hydrogen will be incorporated in the films
Process parameter range
Process Temperature
300 oC
.
Process pressure
~200-900 mTorr
.
Gas flows
SiHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
:0-60 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
O:0-3000 sccm
NHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3}
:0-1000 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
:0-3000 sccm
GeHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
:0-6.00 sccm
5%PHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3}
:0-99 sccm
5%BFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6}
:0-1000 sccm
Substrates
Batch size
1-3 4" wafer per run
1 6" wafer per run
Or several smaler pieces
Deposition on one side of the substrate
.
Substrate material allowed
Silicon wafers
with layers of silicon oxide or silicon (oxy)nitride
Quartz wafers
.
Material allowed on the substrate
Aluminium
All metals < 5% of the substrate coverage (ONLY PECVD3!)
