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Etching using the dry etch technique RIE (Reactive Ion Etch)
At Danchip we have three RIE's. Two (RIE1 and RIE2) for etching silicon based materials, resist and polymers (mainly RIE2) and one (III-V RIE) for etching III-V materials. Here only RIE1 and RIE2 will be described.
The hardware of RIE1 and RIE2 is very similar, but you cannot count on that identical recipes on RIE1 and RIE2 perform exactly the same. In addition to that the main difference between RIE1 and RIE2 is the cleanness of the two equipment. In rough terms RIE1 is the clean system and the RIE2 is the dirty system. This means that in RIE2 opposed to RIE1 it is allowed to have small amounts of metals exposed to the plasma.
The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:
RIE1 info page in LabManager,
RIE2 info page in LabManager
Process information
Equipment performance and process related parameters
| Equipment
|
RIE1
|
RIE2
|
| Purpose
|
Dry etch of
|
- Silicon
- Silicon oxide
- Silicon (oxy)nitride
- Resist
|
- Silicon
- Silicon oxide
- Silicon (oxy)nitride
- Resist and other polymers
|
| Performance
|
Etch rates
|
- Silicon: ~0.04-0.8 µm/min
- Silicon oxide: ~0.02-0.15 µm/min
- Silicon (oxy)nitride: ~0.02-? µm/min
|
- Silicon: ~0.04-0.8 µm/min
- Silicon oxide: ~0.02-0.15 µm/min
- Silicon (oxy)nitride: ~0.02-? µm/min
|
| Anisotropy
|
- Can vary from isotropic to anisotropic with vertical
- sidewalls and on to a physical etch where the sidewalls
- are angled but without etching under the mask.
|
- Can vary from isotropic to anisotropic with vertical
- sidewalls and on to a physical etch where the sidewalls
- are angled but without etching under the mask.
|
| Process parameter range
|
Max pressure
|
|
|
| Max R.F. power
|
|
|
| Gas flows
|
- SF6: 0-52 sccm
- O2: 0-99 sccm
- CHF3: 0-100 sccm
- CF4: 0-42 sccm
- Ar: 0-146 sccm
- N2: 0-100 sccm
- C2F6: 0-24 sccm
|
- SF6: 0-130 sccm
- O2: 0-99 sccm
- CHF3: 0-99 sccm
- CF4: 0-84 sccm
- Ar: 0-145 sccm
- N2: 0-99 sccm
|
| Substrates
|
Batch size
|
- 1 4" wafer
- 1 2" wafer (use Al carrier with Si dummy wafer)
- Several smaller samples (use Al carrier with Si dummy wafer)
|
- 1 4" wafer (use Al carrier with Si dummy wafer)
- 1 2" wafer (use Al carrier with Si dummy wafer)
- 1 6" wafer (requires 6" setup)
- Several smaller samples (use Al carrier with Si dummy wafer)
|
| Allowed materials
|
- Silicon
- Silicon oxide (with boron, phosphorous and germanium)
- Silicon nitrides (with boron, phosphorous and germanium)
- Pure quartz, fused silica (not Pyrex, Tempax and other glasses)
- Resists: AZ resists, e-beam resists, SU8, DUV resists
- Aluminium as thin film layer on your sample
|
- Silicon
- Silicon oxide (with boron, phosphorous and germanium)
- Silicon nitrides (with boron, phosphorous and germanium)
- Pure quartz, fused silica (not Pyrex, Tempax and other glasses)
- Resists: AZ resists, e-beam resists, SU8, DUV resists
- Other olymers (ask the Plasma group for permission)
- Aluminium as thin film layer on your sample
- Other metals (<5% coverage of the wafer)
|
