Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano35

The Sinano3.5 recipe

Recipe Sinano3.5

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	5 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 60 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	438, 440, ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	180 nm zep etched down to 43 nm

• The results of the Sinano3.5 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 5 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 60 W PP, 20 degs, 120 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		90	109	112	114	117	108	11
Sidewall angle	degs		83	81	82	81	80	81	1
CD loss	nm/edge		27	47	62	80	97	63	27
CD loss foot	nm/edge		27	47	62	80	97	63	27
Bowing			10	14	13	11	13	12	2
Bottom curvature			-24	-18	10	5	5	-4	15