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Plasma Asher 1

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Recipe 1:
Note: Plasma asher was cold before use

O2 flow: 70 ml/min
N2 flow: 70 ml/min
Power: 150 W

Ashing time (min)	1	2	5	7	10	10
Etched Thickness (nm)	14.2	16.3	47.6	123.2	854.3	862.1

Recipe 2:
Note: Plasma asher was cold before use

O2 flow: 500 ml/min
N2 flow: 0 ml/min
Power: 500 W

Ashing time (min)	1	2	5	7	10	10
Etched Thickness (nm)	-	8.1	32.9	271.1	495.6	446.2

Descum tests on UV resists

Conny Hjort & Jesper Hanberg, September 2021

Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.

Recipe settings:
Note: plasma Asher was cold before use.

O2 flow: 70 ml/min
N2 flow: 70 ml/min

Power: 150 W

Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.

1,5 um AZ5214E resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	6,28	102,99	76,92	N/A	N/A

1,5 um AZ5214E resist placed horizontally in the carrier:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	63,03	143,32	304,29	372,59	N/A

1,5 um AZ701MiR resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	268,88	199,54	219,03	200,86	292,15

1,5 um AZ 2020nLOF resist:

Ashing time (min)	1	2	3	5	7
Etched Thickness (nm)	1,68	76,51	169,72	481,96	272,59

Plasma Asher 2

Jitka Urbánková & Jesper Hanberg, December 2019

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.

recipe 1:

O2 flow: 100 ml/min
N2 flow: 100 ml/min
Power: 150 W

Ashing time (min)	1	2	3	4	6	7	8	9	10	12	14	15	20
Etched Thickness (nm)	8,7	5,1	12,5	6,2	31,8	86,0	25,7	46,8	38,3	49,7	59,4	140,1	360,7
Initial temperature (°C)	28	21	31	21	22	28	25	24	21	24	24	22	22

recipe 2:

O2 flow: 500 ml/min
N2 flow: 0 ml/min
Power: 200 W

Ashing time (min)	1	2	3	4	5	6	7	8	10	12	15	20
Etched Thickness (nm)	8,1	9,4	16,8	55,2	44,0	47,5	42,5	55,1	85,3	122,4	184,8	305,9
Initial temperature (°C)	22	21	21	22	22	22	21	21	20	21	21	22

A linear time dependence was observed after etching 7 minutes or more (recipe 2).

Plasma Asher 3: Descum

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).

Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.

Testing different power settings:

Recipe settings:

O2 flow: 5 sccm
N2 flow: 0
Pressure: 0.2 mbar
Power: Varied

Experiment parameters:

	FW/REV	C2/C1	Power
recipe 1	50/0	52/31	50%
recipe 2	100/0	53/31	100%
recipe 3	20/0	51/34	20%

Testing different pressure settings:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	5	0,2
recipe 2	100/0	37/38	45	0,8

Ashing of AZ5214E resist:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	17	0,4
recipe 2	100/0	37/39	45	0,8