Specific Process Knowledge/Thin film deposition/ALD Picosun R200/AZO deposition using ALD
AZO can be deposited in a temperature window 150 - 250 oC. Physical and optical properties are strongly corelated with deposition temperture and Al doping concentration. All results shown on this page have been obtained using the Si(100) wafers with native oxide as substrates:
Al-doped ZnO (AZO) deposition overview
The deposition rate for AZO depends on the temperature and doping concentration, see figures that illustrate AZO growth below. The uniformity, thickness, refractive index has been obtained using Ellipsometer VASE.
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ALD-schematics for AZO deposition.
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Schematic drawing of deposited AZO layers and concept illustration of doping "D" number/level 05, 10, 15, 20,etc.
Evgeniy Shkondin, DTU Danchip, 2015-2016.
Al-doped ZnO (AZO) standard recipes
Recipe: AZO 20T
(Number 20 means doping level "D": 19 cycles of ZnO + 1 cycle Al2O3, see details in the table below)===
Maximum deposition thickness: 100 nm
Temperature: 150 oC - 250 oC
# macrocycles | N | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 19 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
How to fill out the process log in LabManager:
The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.
DEZ pulse time: (0.1 + 0.1) s * 19 = 3.8 s
TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s
H2O pulse time: [(0.1 + 0.1) s * 19] + [(0.1 + 0.1) s * 1] = 4.0 s
The number of cycles for each precursor now equals the number of macrocycles (n).
Recipe: AZO 25T
Number 25 means doping level "D": 14 cycles of ZnO + 1 cycle Al2O3, see details in the table below)
Maximum deposition thickness: 100 nm
Temperature: 150 oC - 250 oC
# macrocycles | N | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 24 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
How to fill out the process log in LabManager:
The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.
DEZ pulse time: (0.1 + 0.1) s * 24 = 4.8 s
TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s
H2O pulse time: [(0.1 + 0.1) s * 24] + [(0.1 + 0.1) s * 1] = 5.0 s
The number of cycles for each precursor now equals the number of macrocycles (n).
Recipe: AZO 30T
(Number 30 means doping level "D": 29 cycles of ZnO + 1 cycle Al2O3, see details in the table below)
Maximum deposition thickness: 100 nm
Temperature: 150 oC - 250 oC
# macrocycles | N | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 29 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
How to fill out the process log in LabManager:
The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.
DEZ pulse time: (0.1 + 0.1) s * 29 = 5.8 s
TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s
H2O pulse time: [(0.1 + 0.1) s * 29] + [(0.1 + 0.1) s * 1] = 6.0 s
The number of cycles for each precursor now equals the number of macrocycles (n).
Recipe: AZO 35T
(Number 35 means doping level "D": 34 cycles of ZnO + 1 cycle Al2O3, see details in the table below)
Maximum deposition thickness: 100 nm
Temperature: 150 oC - 250 oC
# macrocycles | N | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 34 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
How to fill out the process log in LabManager:
The pulse time for each precursor equals the total pulse time times the number of cycles in each macrocycle.
DEZ pulse time: (0.1 + 0.1) s * 34 = 6.8 s
TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s
H2O pulse time: [(0.1 + 0.1) s * 34] + [(0.1 + 0.1) s * 1] = 7.0 s
The number of cycles for each precursor now equals the number of macrocycles (n).
XPS investigation of AZO thin films
XPS profiles for AZO has been obtained using XPS-ThermoScientific equipment.
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Typical survey scan of AZO/ZnO. b) High resolution scan of the Al 2p region for AZO/ZnO samples prepared at 250 oC c) Measured Al cocncentration in AZO films prepared at three temperatures: 150 oC, 200 oC and 250 oC. d) Deviation of the measured Al at.% concentaration from the theoretical estimation in case of 250 oC deposition temperature. Theoretical estimation can be calculated using following formula: Failed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle Al(\%)=100\%\cdot\frac{GPC_{Al_{2}O_{3}}}{GPC_{Al_{2}O_{3}}+n\cdot GPC_{ZnO}}}
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Deviation of the measured Al at.% concentaration from the theoretical estimation in case of 150 oC and 200 oC deposition temperature.
Recipes | 150 oC. Al at.% Concentration mesured using (XPS) | 200 oC. Al at.% Concentration mesured using (XPS) | 250 oC. Al at.% Concentration mesured using (XPS) |
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ZnOT (no doping) | 0 | 0 | 0 |
AZO 05T | 30.45 | not measured | not measured |
AZO 10T | 9.89 | 11.84 | 25.23 |
AZO 15T | 5.52 | 6.16 | 12.82 |
AZO 20T | 4.41 | 4.35 | 7.93 |
AZO 25T | 3.41 | 3.61 | 5.82 |
AZO 30T | 2.62 | 3.18 | 4.73 |
AZO 35T | not measured | not measured | 3.98 |
Evgeniy Shkondin, DTU Danchip, 2015-2016.