Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/Standard recipes on the ALD2 tool

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Al2O3 (Aluminium oxide)

Al2O3 deposition using TMA and H2O precursors

Recipe name: AL2O3


Temperature window: 150 oC - 350 oC


TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 3.0 s 4.0 s


Al2O3 deposition using ALD1


Al2O3 deposition using TMA and O3 precursors

Recipe name: AL2O3 O3


Temperature window: 150 oC - 350 oC


TMA O3
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.1 s
Purge time 3.0 s 4.0 s


Al2O3 deposition on high aspect ratio structures using TMA and H2O precursors

Recipe name: AL2O3T


Temperature window: 150 oC - 350 oC


TMA TMA H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s
Purge time 0.5 s 20.0 s 0.5 s 20.0 s


TiO2 (Titanium dioxide)

TiO2 deposition using TiCl4 and H2O precursors

Recipe name: TIO2


Temperature window: 120 oC - 150 oC (amorphous TiO2), 300 oC - 350 oC (anatase TiO2)


TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.1 s
Purge time 4.0 s 5.0 s


TiO2 deposition using ALD1


TiO2 deposition on high aspect ratio structures using TiCl4 H2O precursors

Recipe name: TIO2T


Temperature window: 120 oC -150 oC (amorphous TiO2), 300 oC - 350 oC (anatase TiO2)


TiCl4 TiCl4 H2O H2O
Nitrogen flow 150 sccm 150 sccm 200 sccm 200 sccm
Pulse time 0.1 s 0.1 s 0.1 s 0.1 s
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