Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride

LPCVD (Low Pressure Chemical Vapor Deposition) Silicon Nitride

6" LPCVD nitride furnace (new nitride furnace) positioned in cleanroom 14

At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A 6" furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or 6" wafers and a 4" furnace (installed in 1995) for deposition of stoichiometric nitride and silicon rich (i.e. low stress) nitride on 4" wafers. In LabManager the two furnaces are named "Furnace: LPCVD nitride (6")" and "Furnace: LPCVD nitride", respectively. Please be aware of that it is not allowed to deposit silicon rich nitride in the 6" nitride furnace to avoid problems with particles. Both furnaces are Tempress horizontal furnaces.

The LPCVD silicon nitride deposition is a batch process, where nitride can be deposited on a batch of up to 35 wafers (in the 6" nitride furnace) or 15 wafers (in the 4" nitride furnace) at a time. The deposition takes place at a temperature of 780-845 degrees Celsius and a pressure of 120-200 mTorr. The reactive gases are ammonia (NH₃) and dichlorsilane (SiH₂Cl₂). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers.

At moment there is only a standard recipe for deposition of silicon rich nitride (SRN) on 4" wafers on the 4" nitride furnace. On the 6" nitride furnace there are two standard recipes for deposition of stoichiometric nitride (Si₃N₄), one for 4" wafers and one for 6" wafers.

To get information on how to operate the furnaces please read the user manuals which are uploaded to LabManager on the machine page or consult the Furnace group at Danchip (furnace@danchip.dtu.dk).

Process Knowledge

Please take a look at the process side to get more information about deposition of silicon nitride using an LPCVD furnace: Deposition of Silicon Nitride using LPCVD

Overview of the performance of LPCVD Silicon Nitride and some process related parameters

Purpose	Deposition of silicon nitride	Stoichiometry: Si₃N₄ (only 6" nitride furnace at the moment) SRN (only 4" nitride furnace, only 4" wafers) Si₃N₄: Stoichiometric nitride SRN: Silicon rich nitride (low stress nitride)
Performance	Film thickness	Si₃N₄: ~0 - 1400Å SRN: ~ ~0 - 2800Å Thicker layers have to be deposited over more runs
	Step coverage	Good
	Film quality	Deposition on both sides of the substrate Dense film Few defects
	Nitride thickness uniformity	6" nitride furnace (Si₃N₄): Uniformity within wafer: <2.5 % Wafer-to-wafer uniformity: <4.5 % Run-to-run uniformity: <3 % 4" nitride furnace (SRN): Uniformity within wafer: <2.5 % Wafer-to-wafer uniformity: <6 % Run-to-run uniformity: <3 %
Process parameter range	Process Temperature	6" nitride furnace (Si₃N₄): 780-790 ^oC The process temperature vary over the furnace tube 4" nitride furnace (SRN): 830-845 ^oC The process temperature vary over the furnace tube
	Process pressure	6" nitride furnace (Si₃N₄): 200 mTorr 4" nitride furnace (SRN): 120 mTorr
	Gas flows	6" nitride furnace (Si₃N₄): Dichlorsilane (SiH $_{2}$ Cl $_{2}$ ): 30-33 sccm Ammonia (NH $_{3}$ ): 100-120 sccm The gas flows depend on whether nitride is deposited on 4" or 6" wafers 4" nitride furnace (SRN): Dichlorsilane (SiH $_{2}$ ClFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} ): 80 sccm Ammonia (NH $_{3}$ ): 20 sccm
Substrates	Batch size	6" nitride furnace: 1-25 4" or 6" wafers per run 4" nitride furnace: 1-15 4" wafers per run
Substrates	Substrate material allowed	Silicon wafers (new wafers or RCA cleaned wafers) with layers of silicon oxide or silicon (oxy)nitride from furnaces in stack A or B in cleanroom 2 Pure quartz (fused silica) wafers (RCA cleaned)