Specific Process Knowledge/Lithography/UVExposure Dose
Exposure dose when using AZ 726 MIF developer (TMAH)
KS Aligner
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.
| Thickness | Dose | Development | Comments | |
|---|---|---|---|---|
| AZ 5214E | 1.5 µm | 72 mJ/cm2 | Single puddle, 60 s | Positive process |
| 2.2 µm | 80 mJ/cm2 | |||
| 4.2 µm | 160 mJ/cm2 | |||
| AZ 4562 | 10 µm | 480-540 mJ/cm2 | Multiple puddle, 4 x 60 s | Multiple exposure with 10-15 s pauses is recommended. |
| AZ MiR 701 | 1 µm | ~180 mJ/cm2 | Single puddle, 60 s | PEB: 60 s at 110°C
Preliminary results |
| 2 µm | ~200 mJ/cm2 | Single puddle, 60 s | ||
| 4 µm | ~400 mJ/cm2 | Single puddle, 60 s | PEB: 90 s at 110°C
Preliminary results | |
| AZ nLOF 2020 | 2 µm | 100-120 mJ/cm2 | Single puddle, 60 s | PEB: 60 s at 110°C
Side wall angle ~15°. For lover angle, develop 30 s (~5°) |
Aligner: MA6 - 2
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.
| Date | Thickness | Dose | Development | Comments | |
|---|---|---|---|---|---|
| AZ 5214E Old German version |
Long ago | 1.5 µm | 72 mJ/cm2 | Single puddle, 60 s | Positive process |
| Long ago | 2.2 µm | 90 mJ/cm2 | Single puddle, 60 s | ||
| AZ 5214E Image Reversal Old German version |
Long ago | 1.5 µm | 22 mJ/cm2 | Single puddle, 60 s | Image reversal process. Reversal bake: 120s at 110°C. Flood exposure: 200 mJ/cm2 |
| Long ago | 2.2 µm | 25 mJ/cm2 | Single puddle, 60 s | ||
| AZ MiR 701 Old PFOA containing version |
Long ago | 1.5 µm | 169 mJ/cm2 | Single puddle, 60 s | PEB: 60 s at 110°C |
| Long ago | 2 µm | ~200 mJ/cm2 | Single puddle, 60 s | ||
| Long ago | 4 µm | ~280 mJ/cm2 | Single puddle, 60 s | PEB: 60 s at 110°C Process adopted from process logs | |
| AZ nLOF 2020 | Long ago | 1.5 µm | 104 mJ/cm2 | Single puddle, 30 s | PEB: 60 s at 110°C Use 60 s development for lift-off |
| AZ 5214E New Japanese version |
2023-01-11 jehem |
1.5 µm | 70 mJ/cm2 | Single puddle, 60 s | |
| AZ 5214E Image Reversal New Japanese version |
2023-01-11 jehem |
2.2 µm | 22 mJ/cm2 | Single puddle, 60 s | Image reversal process. Reversal bake: 60s at 110°C. Flood exposure: 500 mJ/cm2 |
| AZ 4562 New Japanese version |
2021-12-08 jehem |
10 µm | 550 mJ/cm2 | Multiple puddles, 5 x 60 s | Priming: HMDS Rehydration after SB: 1 hour (may not be necessary) Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause) Degassing after exposure: 1 hour (may not be necessary) |
| AZ MiR 701 New PFOA free version |
2021-06-23 elkh |
1.5 µm | ~150 mJ/cm2 | Single puddle, 60 s | PEB: 60 s at 110°C |
Maskless aligners
THIS SECTION IS UNDER CONSTRUCTION 
Aligner: Maskless 01
Aligner: Maskless 01 uses a 365nm LED source. The exposure dose needed seems to follow the dose needed to process the same substrate in Aligner: MA6-2. As doses get higher, there is a tendency for the dose needed in the Aligner: Maskless 01 to exceed the dose needed in Aligner: MA6-2.
More information about the process parameters for exposure using Aligner: Maskless 01 can be found here. The process log is also a good source of information.
Aligner: Maskless 02
Aligner: Maskless 02 uses a 375nm or 405nm laser diode array source. Information about the process parameters for exposure using Aligner: Maskless 02 can be found here. The process log is also a good source of information.
Aligner: Maskless 03
Aligner: Maskless 03 uses a 405nm laser diode array source. Information about the process parameters for exposure using Aligner: Maskless 03 can be found here. The process log is also a good source of information.
Exposure dose when using AZ 351B developer (NaOH)
KS Aligner (351B)
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.
| Thickness | Dose | Development | Comments | |
|---|---|---|---|---|
| AZ 5214E | 1.5 µm | 65-75mJ/cm2 | 60 s | Positive process |
| 2.2 µm | 64-80 mJ/cm2 | 70 s | ||
| 4.2 µm | ~160 mJ/cm2 | 3 minutes | ||
| AZ 5214E | 1.5 µm | 30 mJ/cm2 | 60 s | Image reversal process.
Reversal bake: 100s at 110°C. |
| 2.2 µm | 35 mJ/cm2 | 70 s | ||
| AZ 4562 | 10 µm | ~320 mJ/cm2 | 5 minutes | Multiple exposure with 10 s pauses is recommended. |
Additional information:
AZ 5214E image reversal
- 1.5 µm resist on boron glass: around 49 mJ/cm2 (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech).
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