Sputtering of Ti in Wordentec
Deposition rate
The deposition rate will change with the settings for pressure and effect.
Pressure 1*10-2 mbar, Effect 300 W
The rate is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge).
The deposition rate will change with the settings for pressure and effect.
Pressure 1*10-2 mbar, Effect 300 W
The rate is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge).