Specific Process Knowledge/Thermal Process

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Choose an equipment to use

A1 Bor Drive-in furnace - For oxidation of Si wafers and for drive-in after boron pre-dep
A2 Bor Pre-dep furnace - For pre-deposition (doping) of boron on Si wafers
A3 Phosphor Drive-in furnace - For oxidation of new wafers and for drive in of Phosphorus pre-dep
A4 Phosphor Pre-dep furnace - Dope with Phosphorus: For predeposition of Phosphorus on wafers
C1 Furnace Anneal-oxide - For oxidation and annealing, up to 6" wafer
C2 Gate Oxide furnace - For growing of Gate Oxide on new wafers
C3 Anneal-bond furnace - For annealing and annealing of bonded wafers
C4 Aluminium Anneal furnace - For oxidation and annealing of wafers containing Aluminium
Furnace Noble - For non-clean annealing and oxidation
Furnace APOX - Furnace for growing very thick oxide
Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material
BCB Curing Oven - ...
Resist Pyrolysis Furnace - For pyrolysis of different resist layers

The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000°C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample