Specific Process Knowledge/Thin film deposition/thermalevaporator

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Thermal evaporator- A system for deposition of metals

The main purpose of the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate.

It is not only usable for Al deposition. The thermal evaporator has room for two boats and thereby the possibility to make thin films of two different metals. At the moment not that many metals have been tested and made a recipe for. Right only Al and Ag can be evaporated. We have also attempted to evaporate Zn but this was not so easy, so it is not a standard process. If you would like to deposit other metals, please talk to the Thin Film group.

The user manual, APV, technical information and contact information can be found in LabManager:

Thermal Evaporator in LabManager

Process information

Materials for thermal evaporator evaporation

Equipment performance and process related parameters

Purpose	Deposition of metals	Thermal evaporation of metals
Performance	Film thickness	10Å - 1µm* (for some materials)
Performance	Deposition rate	1 Å/s (Al), 5 Å/s (Ag) In general, 0.5-10 Å/s is possible but we need to develop a process for other rates.
Process parameter range	Process Temperature	Approximately room temperature
Process parameter range	Process pressure	Below 4*10^-6 mbar
Substrates	Batch size	Up to 8" wafer Or several smaller pieces Deposition on one side of the substrate
	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals

* For thicknesses above 200 nm, please request permission.