Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
| Line 24: | Line 24: | ||
! Sputter technique [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon oxide in PVD co-sputter/evaporation|(PVD co-sputter/evaporation tool)]] | ! Sputter technique [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon oxide in PVD co-sputter/evaporation|(PVD co-sputter/evaporation tool)]] | ||
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ||
|- valign="top" | |- valign="top" align="left" | ||
| Stoichiometry | | Stoichiometry | ||
| | | | ||
| Line 32: | Line 32: | ||
*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | *Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | ||
Can be doped with boron, phosphorus or germanium | Can be doped with boron, phosphorus or germanium | ||
| Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used) | | | ||
|Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used | *Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used) | ||
|-valign="top" | | | ||
*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used | |||
|-valign="top" align="left" | |||
|Film thickness | |Film thickness | ||
| | | | ||
| Line 44: | Line 46: | ||
| | | | ||
*~10nm - ~1µm(>2h) | *~10nm - ~1µm(>2h) | ||
|- valign="top" | |- valign="top" align="left" | ||
|Process Temperature | |Process Temperature | ||
| | | | ||
| Line 54: | Line 56: | ||
| | | | ||
*Expected to be below 100<sup>o</sup>C | *Expected to be below 100<sup>o</sup>C | ||
|- valign="top" | |- valign="top" align="left" | ||
|Step coverage | |Step coverage | ||
| | | | ||
| Line 64: | Line 66: | ||
* | * | ||
|Not Known | |Not Known | ||
|- valign="top" | |- valign="top" align="left" | ||
|Film quality | |Film quality | ||
| | | | ||
| Line 76: | Line 78: | ||
| | | | ||
* | * | ||
|- valign="top" | |- valign="top" align="left" | ||
|Batch size | |Batch size | ||
| | | | ||
| Line 93: | Line 95: | ||
*1 200mm wafer | *1 200mm wafer | ||
*Smaller pieces can be mounted with capton tape | *Smaller pieces can be mounted with capton tape | ||
|- valign="top" | |- valign="top" align="left" | ||
| Substrate material allowed | | Substrate material allowed | ||
| | | | ||