Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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!style="background:silver; color:black;" align=" | !style="background:silver; color:black;" align="center"|Purpose | ||
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Deposition of TEOS - Silicon dioxide based on tetraethoxysilane | Deposition of TEOS - Silicon dioxide based on tetraethoxysilane | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Few defects | *Few defects | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*O<math>_2</math>: 30 sccm | *O<math>_2</math>: 30 sccm | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
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*Silicon wafers (only clean wafers) | *Silicon wafers (only clean wafers and RCA cleaned) | ||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
**from furnaces in stack A or B in cleanroom 2 | **from furnaces in stack A or B in cleanroom 2 |
Revision as of 14:19, 28 November 2012
LPCVD (Low Pressure Chemical Vapor Deposition) TEOS
Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.
TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 725 oC. It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance.
The LPCVD TEOS has a excellent step coverage and is very good for trench filling. The film thickness is very uniform over the wafer.
The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:
Process Knowledge
Please take a look at the process side for deposition of TEOS oxide: Deposition of TEOS using LPCVD
Purpose |
Deposition of TEOS - Silicon dioxide based on tetraethoxysilane | |
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Performance | Film thickness |
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Step coverage |
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Film quality |
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Process parameter range | Process Temperature |
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Process pressure |
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Gas flows |
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Substrates | Batch size |
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Substrate material allowed |
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