Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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!style="background:silver; color:black;" align=" | !style="background:silver; color:black;" align="center"|Purpose | ||
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Deposition of TEOS - Silicon dioxide based on tetraethoxysilane | Deposition of TEOS - Silicon dioxide based on tetraethoxysilane | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Few defects | *Few defects | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*O<math>_2</math>: 30 sccm | *O<math>_2</math>: 30 sccm | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
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*Silicon wafers (only clean wafers) | *Silicon wafers (only clean wafers and RCA cleaned) | ||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
**from furnaces in stack A or B in cleanroom 2 | **from furnaces in stack A or B in cleanroom 2 | ||