Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12: Difference between revisions
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C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Avg''' | |||
| align="center" style="background:#f0f0f0;"|'''Std''' | |||
|- | |||
| ER||nm/min||241||285||307||325||335||299||37 | |||
|- | |||
| SA||degs||92||92||92||91||91||92||0 | |||
|- | |||
| base||nm/edge||-5||-8||-18||-18||-34||-17||11 | |||
|- | |||
| foot||nm/edge||-5||-8||-18||-18||-4||-10||7 | |||
|- | |||
| Bowing||||19||11||11||14||10||13||4 | |||
|- | |||
| Curve||||-48||-46||-43||-40||-40||-44||4 | |||
|- | |||
| zep||nm/min||||||||||||95|| | |||
|- | |||
| | |||
|} | |||
== Comments == | == Comments == | ||
Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | ||