Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10: Difference between revisions
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== Comments == | == Comments == | ||
The process looks to be too etch aggressive, not enough passivation. | The process looks to be too etch aggressive, not enough passivation. Consider any or all of the following: | ||
* Decreasing the wafer temperature (make more passivant) | * Decreasing the wafer temperature (make more passivant) | ||
* Increasing C4F8 flow (make more passivant) | * Increasing C4F8 flow (make more passivant) | ||