Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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==Oxidation uniformity== | |||
==Oxidation uniformity for 6" wafers== | |||
In November 2023 an oxygen (O<sub>2</sub>) mass flow controller was connected to the furnace, so that it became possible to oxidize different wafers and samples in the furnace. | |||
The C4 furnace is made for processing of 4" wafers placed vertically in a quartz boat. However, it is possible to process 6" wafers (or small sample placed on a 6" wafer), if they are placed horizontally on the boat. | |||
Normally only one 6" wafer is be processed, because the temperature flat zone, i.e. the area where the temperature is uniform, it only a little longer than one quartz boat. The teh | |||
It was tried to oxidize two 6" wafers at the same time in the furnace. | |||
<b>Process parameters:</b> | |||
* Recipe: "DRY1050" | |||
* Oxidation temperature: 1050 <sup>o</sup>C | |||
* Oxidation time: 1 h 40 min | |||
[[image:Oxidation test 1.jpg|600x600px|left|thumb|Two 6" wafer loaded in the C4 furnace. Two 4" dummy wafers are placed in the end of each boat. ]] | |||
[[image:Oxidation test 2.jpg |700x700px|left|thumb|Oxide thickness measured on the two 6" wafers]] | |||