Specific Process Knowledge/Lithography/UVExposure Dose

Exposure dose when using AZ 726 MIF developer (TMAH)

KS Aligner

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.

	Thickness	Dose	Development	Comments
AZ 5214E	1.5 µm	72 mJ/cm2	Single puddle, 60 s	Positive process
	2.2 µm	80 mJ/cm2
	4.2 µm	160 mJ/cm2
AZ 4562	10 µm	480-540 mJ/cm2	Multiple puddle, 4 x 60 s	Multiple exposure with 10-15 s pauses is recommended.
AZ MiR 701	1 µm	~180 mJ/cm2	Single puddle, 60 s	PEB: 60 s at 110°C Preliminary results
	2 µm	~200 mJ/cm2	Single puddle, 60 s
	4 µm	~400 mJ/cm2	Single puddle, 60 s	PEB: 90 s at 110°C Preliminary results
AZ nLOF 2020	2 µm	100-120 mJ/cm2	Single puddle, 60 s	PEB: 60 s at 110°C Side wall angle ~15°. For lover angle, develop 30 s (~5°)

Aligner: MA6 - 2

The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.

	Date	Thickness	Dose	Development	Comments
AZ 5214E Old German version	Long ago	1.5 µm	72 mJ/cm2	Single puddle, 60 s	Positive process
	Long ago	2.2 µm	90 mJ/cm2	Single puddle, 60 s
AZ 5214E Image Reversal Old German version	Long ago	1.5 µm	22 mJ/cm2	Single puddle, 60 s	Image reversal process. Reversal bake: 120s at 110°C. Flood exposure: 200 mJ/cm2
	Long ago	2.2 µm	25 mJ/cm2	Single puddle, 60 s
AZ MiR 701 Old PFOA containing version	Long ago	1.5 µm	169 mJ/cm2	Single puddle, 60 s	PEB: 60 s at 110°C
	Long ago	2 µm	~200 mJ/cm2	Single puddle, 60 s
	Long ago	4 µm	~280 mJ/cm2	Single puddle, 60 s	PEB: 60 s at 110°C Process adopted from process logs
AZ nLOF 2020	Long ago	1.5 µm	104 mJ/cm2	Single puddle, 30 s	PEB: 60 s at 110°C Use 60 s development for lift-off
AZ 5214E New Japanese version	2023-01-11 jehem	1.5 µm	70 mJ/cm2	Single puddle, 60 s
AZ 5214E Image Reversal New Japanese version	2023-01-11 jehem	2.2 µm	22 mJ/cm2	Single puddle, 60 s	Image reversal process. Reversal bake: 60s at 110°C. Flood exposure: 500 mJ/cm2
AZ 4562 New Japanese version	2021-12-08 jehem	10 µm	550 mJ/cm2	Multiple puddles, 5 x 60 s	Priming: HMDS Rehydration after SB: 1 hour (may not be necessary) Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause) Degassing after exposure: 1 hour (may not be necessary)
AZ MiR 701 New PFOA free version	2021-06-23 elkh	1.5 µm	~150 mJ/cm2	Single puddle, 60 s	PEB: 60 s at 110°C

Maskless aligners

THIS SECTION IS UNDER CONSTRUCTION

Aligner: Maskless 01

Aligner: Maskless 01 uses a 365nm LED source. The exposure dose needed seems to follow the dose needed to process the same substrate in Aligner: MA6-2. As doses get higher, there is a tendency for the dose needed in the Aligner: Maskless 01 to exceed the dose needed in Aligner: MA6-2.

More information about the process parameters for exposure using Aligner: Maskless 01 can be found here. The process log is also a good source of information.

Aligner: Maskless 02

Aligner: Maskless 02 uses a 375nm or 405nm laser diode array source. Information about the process parameters for exposure using Aligner: Maskless 02 can be found here. The process log is also a good source of information.

Aligner: Maskless 03

Aligner: Maskless 03 uses a 405nm laser diode array source. Information about the process parameters for exposure using Aligner: Maskless 03 can be found here. The process log is also a good source of information.

Exposure dose when using AZ 351B developer (NaOH)

KS Aligner (351B)

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.

	Thickness	Dose	Development	Comments
AZ 5214E	1.5 µm	65-75mJ/cm2	60 s	Positive process
	2.2 µm	64-80 mJ/cm2	70 s
	4.2 µm	~160 mJ/cm2	3 minutes
AZ 5214E	1.5 µm	30 mJ/cm2	60 s	Image reversal process. Reversal bake: 100s at 110°C. Flood exposure after reversal bake: 210 mJ/cm2
	2.2 µm	35 mJ/cm2	70 s
AZ 4562	10 µm	~320 mJ/cm2	5 minutes	Multiple exposure with 10 s pauses is recommended.

Additional information:

AZ 5214E image reversal

• 1.5 µm resist on boron glass: around 49 mJ/cm² (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech).

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