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Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]]
Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]]


*'''2µm AZ nLOF 2020'''
'''2µm AZ nLOF 2020'''
PEB: 60s @ 110°C
PEB: 60s @ 110°C


Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°)
Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°)
*'''1.5µm AZ MiR 701'''
 
 
'''1.5µm AZ MiR 701'''
PEB: 60s @ 110°C
PEB: 60s @ 110°C


Development: SP 60s
Development: SP 60s
*'''1.5µm AZ 5214E''' (positive process)
 
 
'''1.5µm AZ 5214E''' (positive process)
No PEB
No PEB


Development: SP 60s
Development: SP 60s
*'''2.2µm AZ 5214E''' (image reversal)
 
 
'''2.2µm AZ 5214E''' (image reversal)
Reversal bake: 120s @ 110°C
Reversal bake: 120s @ 110°C


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Development: SP 60s
Development: SP 60s
*'''6.2µm AZ 4562'''
 
 
'''6.2µm AZ 4562'''
No PEB
No PEB


Development: MP 3x60s
Development: MP 3x60s
*'''10µm AZ 4562'''
 
 
'''10µm AZ 4562'''
No PEB
No PEB


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