Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Titanium
|E-beam deposition of Titanium
|E-beam deposition of Titanium
|E-beam deposition of Titanium
|E-beam deposition of Titanium
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! Pre-clean
! Pre-clean
|Ar ion beam
|Ar ion beam
|RF Ar clean
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|RF Ar clean
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|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
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|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1000Å
|.
|.
|.
|.
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|0.5Å/s to 10Å/s
|0.5Å/s to 10Å/s
|10Å/s to 15Å/s
|10Å/s to 15Å/s
|About 10Å/s
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters, about 1 Å/s.
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*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
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*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
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*24x2" wafers or  
*24x2" wafers or  
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* Silicon wafers
*Almost any as long as they do not degas. See cross-contamination sheet.
* Quartz wafers
* Pyrex wafers
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* Silicon wafers
* Quartz wafers
* Pyrex wafers
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* III-V materials
*Almost any as long as they do not degas. See cross-contamination sheet.
* Silicon wafers
* Quartz wafers
* Pyrex wafers
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* Silicon wafers
*Almost any as long as they do not degas. See cross-contamination sheet.
* Quartz wafers
* Pyrex wafers
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*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheets.
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
|
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*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheets.
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
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|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
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* Silicon oxide
*Almost any as noted above
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
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* Silicon oxide
*Almost any as noted above
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
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* Silicon oxide
*Almost any as noted above
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
*Almost any as noted above
*Almost any as noted above
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Revision as of 10:16, 21 September 2022

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Titanium deposition

Titanium can be deposited by e-beam evaporation or sputtering.


In the chart below you can compare the different deposition equipment.

The section below the chart elaborates on the use of Ti as an adhesion layer.


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) Sputter deposition (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Titanium E-beam deposition of Titanium Sputter deposition of Titanium Sputter deposition of Titanium Sputter deposition of Titanium
Pre-clean Ar ion beam RF Ar clean RF Ar clean
Layer thickness 10Å to 1 µm* 10Å to 1 µm* . . .
Deposition rate 0.5Å/s to 10Å/s 10Å/s to 15Å/s Depending on process parameters, see here. Depending on process parameters, about 1 Å/s. Depending on process parameters
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Smaller pieces
  • Up to 1x6" wafers
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed substrates
  • Almost any as long as they do not degas. See cross-contamination sheet.
  • Almost any as long as they do not degas. See cross-contamination sheet.
  • Almost any as long as they do not degas. See cross-contamination sheet.
  • Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
  • Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
Allowed materials
  • Almost any as noted above
  • Almost any as noted above
  • Almost any as noted above
  • Almost any as noted above
  • Almost any as noted above
Comment

* For thicknesses above 600 nm please write to metal@nanotech.dtu.dk to ensure that there is enough material available.

Comments: Adhesion layer

Ti as an adhesion layer

Titanium is most often used as a adhesion layer for other metals, like for example gold. Gold does not stick very well to Si, and to prevent it to come off in future process steps or in the final application, a layer of Ti (or Cr) is often deposited onto the wafer.

The most common thickness of the Ti adhesion layer is 10 nm. Also layers with a thickness of 5 nm is used. Read more about gold adhesion layers.

Very thin adhesion layers

If it is important to have a very thin Ti layer, it is possible to use even thinner adhesion layers. There is some experience in using a 3 nm Ti as adhesion layer for a 200 nm thick gold layer. In this case a Si wafer was dipped in buffer and rinsed in water immediately before being placed in the PVD equipment (Wordentec). After an RF clean process of the wafer, 3nm of Ti and 200 nm of Au was deposited, and this worked fine during futher processing.