Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
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<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]] | <span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]] | ||
===My First E-Beam Lithography Process=== | ===JEOL 9500: My First E-Beam Lithography Process=== | ||
This page is a step by step guide to help new users through their '''first exposure''' on the JEOL 9500 system, (insert link to same page for Raith eLine Plus). In this guide we will set up an exposure job as an example. We will set it up as a dose test and hence keep it at a fairly low complexity level. The JEOL 9500 system has a fairly steep learning curve and we encourage all users to keep the complexity level of their first exposure similar to the job in this guide. | |||
The job set up in this guide will go through the following steps | The job set up in this guide will go through the following steps | ||
*Spin coating of e-beam resist | *Spin coating of e-beam resist | ||
*Job file preparation | *Job file preparation | ||
*Pattern preparation | *Pattern preparation including Proximity Effect Correction | ||
*Exposure | *Exposure | ||
*Development | *Development | ||
==Spin coating of resist== | |||
DTU Nanolab provides the following standard EBL resists. | |||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%" | |||
|- | |||
|- | |||
|-style="background:silver; color:black" | |||
|'''Resist''' | |||
|'''Polarity''' | |||
|'''Manufacturer''' | |||
|'''Comments''' | |||
|'''Technical reports''' | |||
|'''Spin Coater''' | |||
|'''Thinner''' | |||
|'''Developer''' | |||
|'''Rinse''' | |||
|'''Remover''' | |||
|'''Process flows (in docx-format)''' | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]''' | |||
|Positive | |||
|[http://www.allresist.com AllResist] | |||
|Standard positive resist, very similar to ZEP520. | |||
|[[media:Allresist_CSAR62_English.pdf|Allresist_CSAR62_English.pdf]],, [[media:CSAR_62_Abstract_Allresist.pdf|CSAR_62_Abstract_Allresist.pdf]] | |||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |||
|Anisole | |||
|AR-600-546, AR-600-548, N50, MIBK:IPA | |||
|IPA | |||
|AR-600-71, 1165 Remover | |||
|[[media:Process_Flow_CSAR.docx|Process Flow CSAR.docx]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br> | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
|'''[[Specific_Process_Knowledge/Lithography/ZEP520A|ZEP520A]]''' (not supplied by Nanolab anymore) | |||
|Positive resist, contact [mailto:Lithography@Nanolab.dtu.dk Lithography] if you plan to use this resist | |||
|ZEON | |||
|Positive resist | |||
|[[media:ZEP520A.pdf|ZEP520A.pdf]], [[media:ZEP520A.xls|ZEP520A spin curves on SSE Spinner]] | |||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |||
|Anisole | |||
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf|JJAP-51-06FC05.pdf]], [[media:JVB001037.pdf|JVB001037.pdf]] | |||
|IPA | |||
|acetone/1165 | |||
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]] | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|'''[[Specific_Process_Knowledge/Lithography/ARP617|Copolymer AR-P 617]]''' | |||
|Positive | |||
|[http://www.allresist.com AllResist] | |||
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information. | |||
|[[media:AR_P617.pdf|AR_P617.pdf]] | |||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |||
|PGME | |||
|AR 600-55, MIBK:IPA | |||
| | |||
|acetone/1165 | |||
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process_Flow_Trilayer_Ebeam_Resist.docx]] | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]''' | |||
|Negative | |||
|[http://http://www.microresist.de/home_en.htm MicroResist] | |||
|Standard negative resist | |||
|[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]] | |||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |||
|Anisole | |||
|mr DEV | |||
|IPA | |||
|mr REM | |||
|[[media:Process_Flow_mrEBL6000.docx|Process_Flow_mrEBL6000.docx]] | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|'''HSQ (XR-1541)''' | |||
|Negative | |||
|DOW Corning | |||
|Approved. Standard negative resist | |||
|[[media:DowCorningHSQA.pdf|HSQ Dow Corning]], [[media:MSDS HSQ.pdf|MSDS HSQ]] | |||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |||
| | |||
|TMAH, AZ400K:H2O | |||
|H2O | |||
| | |||
|[[media:Process Flow HSQ.docx|process flow HSQ]] | |||
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]] | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
|'''[[Specific_Process_Knowledge/Lithography/ARN8200|AR-N 8200]]''' | |||
|Negative | |||
|[http://www.allresist.com AllResist] | |||
|Both e-beam and DUV sensitive resist. Currently being tested, contact [mailto:thope@dtu.dk Thomas Pedersen] for information. | |||
| | |||
| | |||
| | |||
|AR 300-47 | |||
|H2O | |||
| | |||
| | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
|'''AR-N 7520''' | |||
|Negative | |||
|[http://www.allresist.com AllResist] | |||
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information. | |||
|[[media:AR-N7500-7520.pdf|AR-N7500-7520.pdf]] | |||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |||
|PGMEA | |||
|AR 300-47, TMAH | |||
|H2O | |||
| | |||
| | |||
|} | |||
Table |
Revision as of 11:16, 4 April 2022
THIS PAGE IS UNDER CONSTRUCTION
JEOL 9500: My First E-Beam Lithography Process
This page is a step by step guide to help new users through their first exposure on the JEOL 9500 system, (insert link to same page for Raith eLine Plus). In this guide we will set up an exposure job as an example. We will set it up as a dose test and hence keep it at a fairly low complexity level. The JEOL 9500 system has a fairly steep learning curve and we encourage all users to keep the complexity level of their first exposure similar to the job in this guide.
The job set up in this guide will go through the following steps
- Spin coating of e-beam resist
- Job file preparation
- Pattern preparation including Proximity Effect Correction
- Exposure
- Development
Spin coating of resist
DTU Nanolab provides the following standard EBL resists.
Resist | Polarity | Manufacturer | Comments | Technical reports | Spin Coater | Thinner | Developer | Rinse | Remover | Process flows (in docx-format) |
CSAR | Positive | AllResist | Standard positive resist, very similar to ZEP520. | Allresist_CSAR62_English.pdf,, CSAR_62_Abstract_Allresist.pdf | See table here | Anisole | AR-600-546, AR-600-548, N50, MIBK:IPA | IPA | AR-600-71, 1165 Remover | Process Flow CSAR.docx Process Flow CSAR with ESPACER Process Flow CSAR with Al Process Flow LOR5A with CSAR
|
ZEP520A (not supplied by Nanolab anymore) | Positive resist, contact Lithography if you plan to use this resist | ZEON | Positive resist | ZEP520A.pdf, ZEP520A spin curves on SSE Spinner | See table here | Anisole | ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. JJAP-51-06FC05.pdf, JVB001037.pdf | IPA | acetone/1165 | Process_Flow_ZEP.docx
|
Copolymer AR-P 617 | Positive | AllResist | Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact Lithography for information. | AR_P617.pdf | See table here | PGME | AR 600-55, MIBK:IPA | acetone/1165 | Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx | |
mr EBL 6000.1 | Negative | MicroResist | Standard negative resist | mrEBL6000 processing Guidelines.pdf | See table here | Anisole | mr DEV | IPA | mr REM | Process_Flow_mrEBL6000.docx
|
HSQ (XR-1541) | Negative | DOW Corning | Approved. Standard negative resist | HSQ Dow Corning, MSDS HSQ | See table here | TMAH, AZ400K:H2O | H2O | process flow HSQ | ||
AR-N 8200 | Negative | AllResist | Both e-beam and DUV sensitive resist. Currently being tested, contact Thomas Pedersen for information. | AR 300-47 | H2O | |||||
AR-N 7520 | Negative | AllResist | Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact Peixiong Shi for information. | AR-N7500-7520.pdf | See table here | PGMEA | AR 300-47, TMAH | H2O |
|
Table