Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
→Comparison of the methods for deposition of Titanium Oxide: added sputter-system metal-oxide pc1 |
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*TiO<sub>2</sub> created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | *TiO<sub>2</sub> created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | ||
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*Reactive DC sputtering of Ti target | *Reactive DC sputtering of Ti target | ||
* | *Reactive or non-reactive RF sputtering of TiO2 target | ||
*Reactive pulsed DC sputtering | *Reactive pulsed DC sputtering | ||
*Reactive HIPIMS (high-power impulse magnetron sputtering | *Reactive HIPIMS (high-power impulse magnetron sputtering) | ||
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma | *Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma | ||