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Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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m →Deposition of Titanium Oxide: we now have 3 sputter system options for titania
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,760 edits
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!
!
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
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|-
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!Generel description
!Generel description
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*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
*TiO<sub>2</sub> created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*Reactive DC sputtering of Ti target in Ar/O2 plasma
*(Reactive) RF sputtering of TiO2 target
*Reactive pulsed DC sputtering of Ti target in Ar/O2 plasma
*Reactive HIPIMS (high-power impulse magnetron sputtering of Ti target in Ar/O2
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma
*RF sputtering of TiO2 target
*RF sputtering of TiO2 target
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*Can probably be varied (sputter target: Ti, O2 added during deposition)
*Can probably be varied (sputter target: Ti, O2 added during deposition)
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*unknown
*Can probably be varied
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*Can probably be varied
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*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
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*~10 nm - ~0.5 µm (>2h)
*~10 nm - ~0.5 µm (>2h)
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*~10 nm - ~0.5 µm
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*~10 nm - ~0.5 µm (>2h)
*~10 nm - ~0.5 µm (>2h)
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*3.0-3.5 nm/min (reactive sputtering)
*3.0-3.5 nm/min (reactive sputtering)
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*not yet known, probably faster than Sputter-System(Lesker)
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*3-5 nm/min (RF sputtering)
*3-5 nm/min (RF sputtering)
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Not Known
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*Not Known
*Not Known
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!Process Temperature
!Process Temperature
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*Expected to be below 100<sup>o</sup>C
*Expected to be below 100 °C
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*Done at RT. There is a possibility to run at higher temperatures
*RT to 600 °C
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*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub>
*RT to 400 °C
*300<sup>o</sup>C - 350<sup>o</sup>C: Anatase TiO<sub>2</sub>   
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*120 °C - 150 °C: Amorphous TiO<sub>2</sub>
*300 °C - 350 °C: Anatase TiO<sub>2</sub>   
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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*
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*
*
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*1 200mm wafer
*1 200mm wafer
*Smaller pieces can be mounted with capton tape
*Smaller pieces can be mounted with capton tape
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*many small samples
*Up to 10x 100 mm or 150 mm wafers
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*several small samples
*several small samples
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*Almost any materials
*Almost any materials
*Pb and poisonous materials only after special agreement
*Pb and poisonous materials only after special agreement
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*Almost any that do not outgas and are not very poisonous
*Dedicated carrier for III-V materials
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
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*Silicon
*Silicon
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