Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

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! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]])
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|E-beam deposition of Titanium
|E-beam deposition of Titanium
|E-beam deposition of Titanium
|E-beam deposition of Titanium
|Sputter deposition of Titanium
|Sputter deposition of Titanium
|Sputter deposition of Titanium
|Sputter deposition of Titanium
|Sputter deposition of Titanium
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|RF Ar clean
|RF Ar clean
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|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
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|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1000Å
|10Å to 1000Å
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|.
|.
|.
|.
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|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Depending on process parameters, see [[Sputtering of Ti in Wordentec|here]].
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters
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|-


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* Up to 1x6" wafers  
* Up to 1x6" wafers  
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*Up to 10x4" or 6" wafers
*Many smaller pieces


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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* Pyrex wafers  
* Pyrex wafers  
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* Silicon wafers
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheets.
* Quartz wafers
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* Pyrex wafers
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheets.
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|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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* Metals  
* Metals  
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* Silicon oxide
Almost any as for substrates
* Silicon (oxy)nitride
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* Photoresist
Almost any as for substrates
* Metals
 
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|-style="background:LightGrey; color:black"
! Comment
! Comment
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'''*'''  ''For thicknesses above 600 nm please write to metal@danchip.dtu.dk to ensure that there is enough material available.''
'''*'''  ''For thicknesses above 600 nm please write to metal@nanotech.dtu.dk to ensure that there is enough material available.''


== Comments: Adhesion layer ==
== Comments: Adhesion layer ==

Revision as of 14:05, 20 April 2020

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Titanium deposition

Titanium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) E-beam evaporation (Physimeca) Sputter deposition (Wordentec) Sputter deposition (Lesker) Sputter deposition (Cluster-based sputter system)
General description E-beam deposition of Titanium E-beam deposition of Titanium E-beam deposition of Titanium Sputter deposition of Titanium Sputter deposition of Titanium Sputter deposition of Titanium
Pre-clean Ar ion beam RF Ar clean RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1 µm* 10Å to 1 µm* 10Å to 1000Å . . .
Deposition rate 0.5Å/s to 10Å/s 10Å/s to 15Å/s About 10Å/s Depending on process parameters, see here. Depending on process parameters, about 1 Å/s. Depending on process parameters
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Smaller pieces
  • Up to 1x6" wafers
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • III-V materials
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
  • Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheets.
  • Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheets.
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals

Almost any as for substrates

Almost any as for substrates

Comment

* For thicknesses above 600 nm please write to metal@nanotech.dtu.dk to ensure that there is enough material available.

Comments: Adhesion layer

Ti as an adhesion layer

Titanium is most often used as a adhesion layer for other metals, like for example gold. Gold does not stick very well to Si, and to prevent it to come off in future process steps or in the final application, a layer of Ti (or Cr) is often deposited onto the wafer.

The most common thickness of the Ti adhesion layer is 10 nm. Also layers with a thickness of 5 nm is used. Read more about gold adhesion layers.

Very thin adhesion layers

If it is important to have a very thin Ti layer, it is possible to use even thinner adhesion layers. There is some experience in using a 3 nm Ti as adhesion layer for a 200 nm thick gold layer. In this case a Si wafer was dipped in buffer and rinsed in water immediately before being placed in the PVD equipment (Wordentec). After an RF clean process of the wafer, 3nm of Ti and 200 nm of Au was deposited, and this worked fine during futher processing.