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Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope: Difference between revisions

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Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of  
Above, one can see the multiplexing of the Bosch process by alternation of the gas flows of  
<span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. The  
<span style="color:#FFFFFF; background:blue">SF<sub>6</sub></span> (that has flow initially at 350 sccm in the break for the first 1.5 second then 550 sccm for 5.5 seconds in the main etch phase) and <span style="background:red">C<sub>4</sub>F<sub>8</sub></span> (at 200 sccm in the dep phase) according to the process recipe table above. Below, the <span style="background:lime">pressure</span> alternates between 25 mtorr (dep and break) and 150 mtorr (main). The <span style="background:yellow">Platen Electrode DC Bias</span> (the electrostatic potential difference between the plasma and the wafer electrode that drives the ion bombardment in the etch process) is generated by the <span style="color:#FFFFFF; background:purple">Platen Power</span> at 140 W in the break and 45 W in the main etch. The  
[[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#Why_RF_matching_is_extremely_important_in_the_Bosch_process|Reflected Platen Power ]]
[[Specific Process Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general|Reflected Platen Power]]
 


Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description#Why_RF_matching_is_extremely_important_in_the_Bosch_process
<gallery caption="4 cycles of Process D4 " widths="400" heights="500" perrow="2">
<gallery caption="4 cycles of Process D4 " widths="400" heights="500" perrow="2">
Image:PrD4 SPTS.png | Left: Recorded with the SPTS software
Image:PrD4 SPTS.png | Left: Recorded with the SPTS software