Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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=== InP etch with Cl2/H2 and a Si carrier wafer== | |||
{| border="1" cellspacing="2" cellpadding="3" | |||
|'''Recipe name''' | |||
|'''?''' | |||
|- | |||
|HBr flow | |||
|10 sccm | |||
|- | |||
|CH<sub>4</sub> flow | |||
|5 sccm | |||
|- | |||
|Ar flow | |||
|2 sccm | |||
|- | |||
|Platen power | |||
|50 W | |||
|- | |||
|Coil power | |||
|600 W | |||
|- | |||
|Pressure | |||
|5 mTorr | |||
|- | |||
|Platen chiller temperature | |||
|180 <sup>o</sup>C | |||
|- | |||
|Comment | |||
|Sample crystal bonded (Crystalbond 509, clear color) to Si carrier | |||
|} | |||
{| border="1" cellspacing="2" cellpadding="3" align="left" | |||
|colspan="2" align="center"| '''Results''' | |||
|- | |||
|Etch rate | |||
| | |||
250-350 nm/min (2" wafer)<br> | |||
350-450 nm/min (quarter of a 2" wafer) | |||
|- | |||
|Sidewall angle | |||
| | |||
85-87<sup>o</sup> (bottom)<br> | |||
93-95<sup>o</sup> (top)<br> | |||
Concave profile | |||
|- | |||
|Selectivity (InP:HSQ) | |||
|15:1 (2"), 20:1 | |||
|- | |||
|} | |||
=== InP etch with Cl2/CH4/Ar 2013=== | === InP etch with Cl2/CH4/Ar 2013=== | ||