Specific Process Knowledge/Thin film deposition/Deposition of Zinc: Difference between revisions
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XPS was done here at Danchip with 50 eV and 50 ms dwell per scan. The number of scans per element varied as shown below in the figure captions. We can clearly see that the Zn amount in the Al film was decreased after cleaning the chamber. Of course we cannot guarantee that there was no Zn present at all, since there is a detection limit for the XPS even with many scans per level. | XPS was done here at Danchip with 50 eV and 50 ms dwell per scan. The number of scans per element varied as shown below in the figure captions. We can clearly see that the Zn amount in the Al film was decreased after cleaning the chamber. Of course we cannot guarantee that there was no Zn present at all, since there is a detection limit for the XPS even with many scans per level. | ||
[[File:Al w Zn from 20-06-2018.png|400px|left|thumb|Al film made before chamber was cleaned after Zn deposition. 10 scans per level. Zn peaks are obvious.]] | [[File:Al w Zn from 20-06-2018.png|400px|left|thumb|XPS of Al film made before chamber was cleaned after Zn deposition. 10 scans per level. Zn peaks are obvious.]] | ||
[[File:Al wo Zn from 09-07-2018.png|400px|right|thumb|Al film made after chamber was cleaned after Zn deposition. 10 scans per level for Al, 30 scans per level for Zn. No Zn visible.]] | [[File:Al wo Zn from 09-07-2018.png|400px|right|thumb|XPS of Al film made after chamber was cleaned after Zn deposition and a new crucible was used for Al. 10 scans per level for Al, 30 scans per level for Zn. No Zn peaks are visible.]] | ||