Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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-*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
+ALD1:
-*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO2 deposition on trenches using ALD]]
+*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD1]]
+ALD2:
+*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiO2 deposition using ALD2|TiO2 deposition using ALD2]]
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 *Silicon
 *Silicon oxide, silicon nitride
 *Quartz/fused silica
-*Al, Al<sub>2</sub>O<sub>3</sub>
+*Metals - Use a dedicated carrier wafer
-*Ti, TiO<sub>2</sub>
+*III-V materials - Use dedicated carrier wafer
-*Other metals (use dedicated carrier wafer)
+*Polymers - Depending on the melting point/deposition temperature, use dedicated carrier wafer. Ask for permission
-*III-V materials (use dedicated carrier wafer)
-*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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