Specific Process Knowledge/Etch/KOH Etch/ProcessInfo

QC

Quality Control (QC) for the KOH Si etching baths.

Quality Control (QC) for Si Etch 01, and Si Etch 02

The QC procedure for Si Etch: 01 The QC procedure for Si Etch: 01 The newest QC data for KOH2 The newest QC data for KOH3 QC Recipe:   Solution 28 wt% KOH Temperature 80°C Time 90 min Substrate Si (100) Masking No masking QC limits Si Etch 01 Si Etch 02 Etch rate in Si(100) 1.3 ± 0.1 µm/min 1.29 ± 0.06 µm/min Roughness not measured not measured Nonuniformity < 3% < 3%

Theory

Definition of structures

Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined - 54.7^o with respect to the (100) surface - whereas in Si(110) the sidewalls are vertical (see figures below).

• Anisotropic wet silicon etch: dependency on crystal orientation
• 
  Etched profile when etching Si(100).
• 
  Etched profile when etching Si(110).

For Si(100), the relation between the width of the bottom of the etched groove (W_b) and the width of the opening (W_o) at the wafer surface in a groove etched to the depth l is given by:

Failed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle W_b = W_o - 2lcot(54.7^o) = W_o - \sqrt{2} l}